Arrangements for an integrated sensor

1. An integrated circuit, comprising:

a lead frame;

a first substrate having first and second opposing surfaces, wherein the first substrate is coupled to the lead frame such that the second surface of the first substrate is above the lead frame and the first surface of the first substrate is above the second surface of the first substrate;

a second substrate having first and second opposing surfaces, wherein the second substrate is coupled to the lead frame such that the second surface of the second substrate is above the lead frame and the first surface of the second substrate is above the second surface of the second substrate;

an electronic component disposed on the first surface of the first substrate;

a first magnetic field sensing element disposed on the first surface of the second substrate; and

a second magnetic field sensing element disposed on the first surface of the first substrate.

2. The integrated circuit of claim 1 , further including a flux concentrator disposed proximate to the magnetic field sensing element.

3. The integrated circuit of claim 1 , wherein the first substrate is comprised of a selected one of Si, GaAs, InP, InSb, InGaAs, InGaAsP, SiGe, ceramic, or glass and the second substrate is comprised of a selected one of Si, GaAs, InP, InSb, InGaAs, InGaAsP, SiGe, ceramic, or glass.

4. The integrated circuit of claim 1 , wherein the first surface of the second substrate is coupled to the first surface of the first substrate with a wire bond.

5. The integrated circuit of claim 4 , further including at least one flux concentrator disposed proximate to at least one of the magnetic field sensing element or the second magnetic field sensing element.

6. The integrated circuit of claim 1 , wherein the lead frame further comprises a plurality of leads, wherein at least two of the plurality of leads are coupled to form a current conductor portion, wherein the current conductor portion is disposed proximate to the second substrate, and wherein the integrated circuit is responsive to a current flowing through the current conductor portion.

7. The integrated circuit of claim 1 , further comprising a conductor, wherein the integrated circuit is adapted to be responsive to a magnetic field generated by a current passing through the conductor.

8. The integrated circuit of claim 1 , further comprising:

a current conductor disposed proximate to the second substrate; and

a flux concentrator shaped so that a first portion of the flux concentrator is disposed under the lead frame and a second portion of the flux concentrator is disposed above the first surface of the second substrate.

9. The integrated circuit of claim 1 , further comprising a conductor, wherein the first and second magnetic field sensing elements are responsive to a magnetic field generated by a current carried by the conductor.

10. An integrated circuit, comprising:

a first magnetic field sensing element for providing a first sensitivity to a magnetic field;

a second magnetic field sensing element for providing a selected second different sensitivity to the magnetic field; and

a circuit coupled to the first and second magnetic field sensing elements, operable to provide the integrated circuit with a first operating range responsive to the first magnetic field sensing element and a second selected different operating range responsive to the second magnetic field sensing element.

11. The integrated circuit of claim 10 , wherein the first magnetic field sensing element and the second magnetic field sensing element are Hall effect elements.

12. The integrated circuit of claim 10 , wherein the first magnetic field sensing element and the second magnetic field sensing element are magnetoresistance elements.

13. The integrated circuit of claim 10 , wherein the first magnetic field sensing element is a Hall effect element and the second magnetic field sensing element is a magnetoresistance element.

14. The integrated circuit of claim 10 , further comprising a lead frame having a plurality of leads, wherein at least two of the plurality of leads are coupled to form a current conductor portion, wherein the current conductor portion is disposed proximate to the first and second magnetic field sensing elements, and wherein the integrated circuit is responsive to a current flowing through the current conductor portion.

15. The integrated circuit of claim 10 , further comprising a conductor, wherein the magnetic field is generated by a current carried by the conductor.

16. An integrated circuit, comprising:

a first substrate;

a circuit element disposed on a surface of the first substrate;

a Hall effect element disposed on a surface of the first substrate, wherein the Hall effect element provides a first sensitivity to a magnetic field;

a second substrate coupled to the first substrate, and

a magnetoresistance element disposed on a surface of the second substrate, wherein the magnetoresistance element provides a selected second different sensitivity to the magnetic field, resulting in the integrated circuit having a first operating range responsive to the first magnetic field sensing element and a second selected different operating range responsive to the second magnetic field sensing element.

17. The integrated circuit of claim 16 , wherein the first substrate is comprised of a selected one of Si, GaAs, InP, InSb, InGaAs, InGaAsP, SiGe, ceramic, or glass and the second substrate is comprised of a selected one of Si, GaAs, InP, InSb, InGaAsP, SiGe, ceramic, or glass.

18. The integrated circuit of claim 16 , further comprising a conductor, wherein the magnetic field is generated by a current carried by the conductor.