Resistor having a predetermined temperature coefficient
A material stack has an electrical resistance generally the same in the presence of a magnetic field and in the presence of no magnetic field. The electrical resistance of the material stack has a temperature coefficient generally the same as a magnetoresistance element.
1. A material stack comprising:
an antiferromagnetic layer;
a first pinned layer disposed over the antiferromagnetic layer;
a non-magnetic layer disposed over the pinned layer; and
a second pinned layer disposed over the non-magnetic layer, wherein the material stack has an electrical resistance substantially the same in the presence of any magnetic field in any direction relative to the material stack and in the presence of no magnetic field, wherein the electrical resistance has a temperature coefficient about the same as a temperature coefficient of a magnetoresistance element, and wherein the material stack does not include a free layer.
2. The material stack of claim 1 , wherein the electrical resistance of the material stack also has about the same resistance as an electrical resistance of the magnetoresistance element.
3. The material stack of claim 1 , wherein the antiferromagnetic layer comprises PtMn, the first and second pinned layers are comprised of CoFe, and the non-magnetic layer comprises a selected one of Ir or Ru.
4. A circuit comprising:
a magnetoresistance element; and
a material stack coupled to the magnetoresistance element, comprising:
an antiferromagnetic layer;
a first pinned layer disposed over the antiferromagnetic layer;
a non-magnetic layer disposed over the pinned layer; and
a second pinned layer disposed over the non-magnetic layer, wherein the material stack has an electrical resistance substantially the same in the presence of any magnetic field in any direction relative to the material stack and in the presence of no magnetic field, wherein the electrical resistance has a temperature coefficient about the same as a temperature coefficient of the magnetoresistance element, and wherein the material stack does not include a free layer.
5. The circuit of claim 4 , wherein the electrical resistance of the material stack also has about the same resistance as an electrical resistance of the magnetoresistance element.
6. The circuit of claim 4 , wherein the antiferromagnetic layer comprises PtMn, the first and second pinned layers are comprised of CoFe, and the non-magnetic layer comprises a selected one of Ir or Ru.
7. The circuit of claim 4 , wherein the circuit provides a selected one of a voltage divider or a Wheatstone bridge.
8. The circuit of claim 4 , wherein the circuit is provided in a selected one of a current sensor, a proximity detector, or a magnetic field sensor, wherein the current sensor is responsive to an electrical current, the proximity detector is responsive to proximity of a ferromagnetic article and the magnetic field sensor is responsive to a magnetic field external to the magnetic field sensor.
9. The circuit of claim 4 , wherein the circuit is provided in a current sensor responsive to an electrical current.
10. The circuit of claim 4 , wherein the circuit is provided in a magnetic field sensor responsive to a magnetic field external to the magnetic field sensor.
11. The circuit of claim 4 , wherein the circuit is provided in a proximity detector responsive to proximity of a ferromagnetic article.
12. The circuit of claim 4 , wherein the magnetoresistance element is provided as a giant magnetoresistance (GMR) element.