Wiring pattern, electronic device, organic semiconductor device, layered wiring pattern, and layered wiring substrate using the wiring pattern
A wiring pattern is disclosed including: a variable wettability layer including a material whose critical surface tension changes in response to energy provided thereto, the wettability changing layer including a high surface energy part exhibiting a high critical surface tension and a low surface energy part exhibiting low critical surface tension; and a conductive pattern layer formed on the variable wettability layer at the high surface energy part. The conductive pattern layer has an elongated shape with a chamfered corner part in a plan view.
1. A wiring pattern comprising:
a variable wettability layer including a material whose critical surface tension changes in response to energy provided thereto, the variable wettability layer including a high surface energy part exhibiting a high critical surface tension and a low surface energy part exhibiting a low critical surface tension; and
a conductive pattern layer formed on the variable wettability layer at the high surface energy part;
wherein the conductive pattern layer has an elongated shape with a chamfered corner part in a plan view and the high surface energy part includes a chamfered corner part in a plan view.
2. The wiring pattern as claimed in claim 1 , further comprising:
a semiconductor layer contacting the low surface energy part.
3. The wiring pattern as claimed in claim 2 , wherein the semiconductor layer is an organic semiconductor layer.
4. The wiring pattern as claimed in claim 1 , wherein another conductive pattern layer is formed on an entire surface of the wiring pattern via an insulating layer.
5. The wiring pattern as claimed in claim 4 , wherein the other conductive pattern layer is disposed on a high surface energy part of another variable wettability layer.
6. The wiring pattern as claimed in claim 1 , wherein the chamfered corner part has a rounded shape in a plan view.
7. The wiring pattern as claimed in claim 1 , wherein the conductive pattern layer is formed by using an inkjet method which applies a conductive liquid on the high surface energy part of the variable wettability layer.
8. An electronic device comprising:
the wiring pattern as claimed in claim 1 .
9. A layered wiring pattern comprising:
a plurality of layers of the wiring pattern claimed in claim 1 , wherein an insulating film is provided between each of the layers.
10. The layered wiring pattern as claimed in claim 9 , wherein the elongated conductive pattern layer of the wiring pattern does not overlap with those of the wiring pattern of other layers.
11. A layered wiring pattern substrate comprising:
a substrate on which the wiring pattern claimed in claim 1 is formed.
12. An organic semiconductor device comprising:
a wiring pattern having
a variable wettability layer including a material whose critical surface tension changes in response to energy provided thereto, the variable wettability layer including a high surface energy part exhibiting a high critical surface tension and a low surface energy part exhibiting a low critical surface tension,
a conductive pattern layer formed on the variable wettability layer at the high surface energy part, and
an organic semiconductor layer contacting the low surface energy part; and
another conductive pattern layer formed on either an entire surface of the wiring pattern via another variable wettability layer or an insulating layer formed on the organic semiconductor layer;
wherein the conductive pattern layer has an elongated shape with a chamfered corner part in a plan view and the high surface energy part includes a chamfered corner part in a plan view.
13. The organic semiconductor device as claimed in claim 12 , wherein the chamfered corner part has a rounded shape in a plan view.
14. The organic semiconductor device as claimed in claim 12 , wherein the organic semiconductor device is a thin film transistor (TFT).
15. A method for producing a wiring pattern comprising:
forming a variable wettability layer, the variable wettability layer including a material whose critical surface tension changes in response to energy provided thereto, the variable wettability layer including a high surface energy part exhibiting a high critical surface tension and a low surface energy part exhibiting a low critical surface tension;
forming a mask having a pattern for a conductive pattern layer on the variable wettability layer, wherein the mask is chamfered at a corner part in a plan view;
forming the high surface energy part having a chamfered corner part in a plan view by using the mask; and
forming the conductive pattern layer on the variable wettability layer at the high surface energy part by using an inkjet method which applies a conductive liquid on the high surface energy part of the variable wettability layer,
wherein the conductive pattern layer has an elongated shape with a chamfered corner part in a plan view.
16. The method according to claim 15 , further comprising:
forming another conductive pattern layer on an insulating layer formed on the wiring pattern.
17. The method according to claim 16 , further comprising:
forming the other conductive pattern layer by applying a conductive liquid onto a high surface energy part of another variable wettability layer.
18. The method according to claim 15 , further comprising:
providing a substrate on which the variable wettability layer is formed.