Method of synthesizing silicon wires
View Patent ↗A method of synthesizing silicon wires generally includes the steps of: providing a substrate; forming a copper catalyst particle layer on a top surface of the substrate; heating the reactive device at a temperature of above 450° C. in a flowing protective gas; and introducing a mixture of a protective gas and a silicon-based reactive gas at a temperature of above 450° C. at a pressure of below 700 Torr, thereby forming the silicon wires on the substrate.
1. A synthesis method of silicon wires comprising:
providing a substrate;
forming a layer containing a cupric chloride or cupric sulfate on a top surface of the substrate, the layer containing the cupric chloride or cupric sulfate being in a form of one of a powder and a liquid solution; and
heating the substrate with the layer containing the cupric chloride or cupric sulfate thereon in a flowing protective gas to decompose the cupric chloride or cupric sulfate to thereby form a copper catalyst particle layer on the substrate; and
introducing a mixture of the protective gas and a silicon-containing reactive gas at a temperature of above about 450° C. and at a pressure of below about 700 Torr, thereby forming the silicon wires on the substrate.
2. The synthesis method of silicon wires as described in claim 1 , wherein the substrate is comprised of one of silicon, silicon dioxide, quartz and glass.
3. The synthesis method of silicon wires as described in claim 1 , wherein the protective gas is comprised of a gas selected from argon, nitrogen, and helium.
4. The synthesis method of silicon wires as described in claim 1 , wherein the silicon-based reactive gas is comprised of a gas selected from silane and silicon monoxide.