Semiconductor memory having both volatile and non-volatile functionality and method of operating

1. A semiconductor memory cell comprising:

a fin structure extending from a substrate, the fin structure including a floating substrate region having a first conductivity type configured to store data as volatile memory; first and second regions interfacing with the floating substrate region, each of the first and second regions having a second conductivity type; first and second floating gates or trapping layers positioned adjacent opposite sides of the floating substrate region; a first insulating layer positioned between the floating substrate region and the floating gates or trapping layers, the floating gates or trapping layers being configured to receive transfer of data stored by the volatile memory and store the data as nonvolatile memory in the floating gates or trapping layers upon interruption of power to the memory cell; a control gate wrapped around the floating gates or trapping layers and the floating substrate region; and a second insulating layer positioned between the floating gates or trapping layers and the control gate;

the substrate including an isolation layer that isolates the floating substrate region from the substrate below the isolation layer.

2. The memory cell of claim 1 , wherein the isolation layer comprises a buried layer of the second conductivity type.

3. The semiconductor memory of cell of claim 1 , wherein the substrate comprises a silicon-on-insulator (SOI) substrate.

4. The semiconductor memory cell of claim 1 , wherein the isolation layer comprises a buried oxide insulating layer.

5. The semiconductor memory cell of claim 1 , wherein the fin structure extends substantially perpendicularly from a plane of the substrate, forming a three-dimensional memory cell.

6. The semiconductor memory cell of claim 1 , wherein the control gate is capacitively coupled to the floating gates or trapping layers and insulated from the floating gates or trapping layers by a dielectric layer.

7. The semiconductor memory cell of claim 1 , wherein the first conductivity type is “p” type and the second conductivity type is “n” type.

8. The semiconductor cell of claim 1 , wherein the floating substrate region is configured so that data can be written thereto by hot hole injection.

9. The semiconductor cell of claim 1 , wherein when power to the cell is interrupted, data transfer from the floating substrate region to the floating gates or trapping layers occurs and the floating gates or trapping layers store the data as non-volatile memory.

10. The semiconductor cell of claim 1 , wherein the floating gates or trapping layers store a charge in non-volatile memory that is complementary to a charge that was stored in the floating substrate region at a time when the power is interrupted.

11. The semiconductor cell of claim 9 , wherein when power is restored to the cell, data transfer from the floating gates or trapping layers to the floating substrate region occurs and the cell functions as volatile memory.

12. The semiconductor memory cell of claim 11 , wherein a state of the floating gates or trapping layers is set to a predetermined state after the data is transferred from the floating gates or trapping layers to the floating substrate region.

13. The semiconductor memory cell of claim 1 , wherein the semiconductor memory cell functions as a binary cell.

14. The semiconductor memory cell of claim 1 , wherein the semiconductor memory cell functions as a multi-level cell.