IP Library Granted Patent US 7,851,768
Granted Patent B2
US 7,851,768 · App. 12/133,147 · Granted Dec 14, 2010

Ultra high precision measurement tool with control loop

Assignee: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
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Quick Facts
Patent No.
US 7,851,768
App. No.
12/133,147
Granted
Dec 14, 2010
Kind
B2
Abstract

A focused ion beam device is described comprising a gas field ion source with an emitter emitting an ion beam including ions of gas, an ion beam column and a beam current control loop comprising a beam current measurement device. Furthermore, the focused ion beam device may have a sample charge control comprising measuring the sample charge. A method of operating a focused ion beam device is provided comprising applying a voltage between an emitter an electrode, applying gas to the emitter, emitting ions of a gas from the emitter and controlling a beam current by measuring the beam current with a beam current measurement device.

Claims (30)

1. A focused ion beam device, comprising

a gas field ion source having an emitter adapted to emit an ion beam including ions of gas;

an ion beam column;

a beam current control loop configured for automatically triggering a probe current control action comprising a beam current measurement device configured for measuring the beam current emitted from the emitter in the column or the current provided to the emitter; and

a sample charge feedback control comprising a charge measurement unit.

2. The focused ion beam device according to claim 1 , wherein the emitter comprises an emitter base tip and an emitter supertip.

3. The focused ion beam device according to claim 2 , wherein the supertip has one single atom at its apex.

4. The focused ion beam device according to claim 1 , further comprising an analyzer for analyzing the structure of a specimen.

5. The focused ion beam device according claim 1 , wherein the beam current measurement device comprises a Faraday cup.

6. The focused ion beam device according to claim 1 , wherein the beam current measurement device comprises a beam limiting aperture.

7. The focused ion beam device according to claim 1 , further comprising a deflector directing the ion beam to the measurement device.

8. The focused ion beam device according to claim 7 , wherein the deflector is a beam blanker.

9. The focused ion beam device according to claim 1 , wherein the sample charge control comprises a spectrometer.

10. The focused ion beam device according to claim 1 , wherein the sample charge control comprises a retarding field configuration.

11. The focused ion beam device according to claim 1 , wherein the sample charge measurement unit comprises a detector.

12. The focused ion beam device according to claim 1 , wherein the sample charge control comprises a sample charge measurement unit and a detector.

13. A method of operating an ion beam device, having an ion beam column; a gas field ion source with an emitter in a emitter region, the method comprising:

applying a voltage between the emitter and an electrode with a voltage source;

applying a gas to the emitter region by a gas feeding unit;

emitting ions of a gas from the emitter;

automatically controlling a beam current by measuring the beam current emitted from the emitter in the column or the current provided to the emitter with a beam current measurement device and by feeding the information to a control connected to at least one of the voltage source, the condenser voltage and the gas feeding unit, wherein the measurement of the beam current is used as a signal for changing the beam current;

measuring and controlling the sample charge; and

triggering compensation measures based on the measurement of the sample charge,

wherein a stability of the beam current of is provided a range of 10% or less.

14. The method according to claim 13 , wherein the gas is helium, hydrogen, neon, argon or methane.

15. The method according to claim 13 , wherein the emitter has a single emission centre.

16. The method according to claim 13 , further comprising controlling the beam current changes when the changes have reached a predetermined limit.

17. The method according to claim 13 , further comprising deflecting an ion beam for measuring the beam current.

18. The method according to claim 13 , wherein the sample charge is measured and controlled during operation of the ion beam device.

19. The method according to claim 13 , further comprising supplying a control voltage to the sample after measuring the sample charge.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2008
From: FROSIEN, JUERGEN
To: ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FUR HALBLEITERPRUFTECHNIK MBH
Reel/Frame 021045/0622 →
Priority Claims (1)
EP 08156663 · May 21, 2008 · regional
Continuity (1)
Related Publication 20090289191A1 · Nov 26, 2009