Elastic wave device and method of producing the same
An elastic wave device has a structure that prevents cracks from being formed in a piezoelectric substrate in flip-chip bonding using a bump, that minimizes the contact resistance in a contact portion where wiring patterns are electrically connected to each other, and that improves the insertion loss. In the elastic wave device, first and second multilayer electrically conductive films are provided on a piezoelectric substrate, the first multilayer electrically conductive film defines an IDT electrode and a first wiring pattern, the second multilayer electrically conductive film defines an electrode pad to which a bump is connected and a second wiring pattern, at least one contact portion where the second wiring pattern is overlapped on the first wiring pattern so as to be electrically connected to each other is provided, a top electrically conductive film of the first multilayer electrically conductive film is a Ti film, and a bottom electrically conductive film of the second multilayer electrically conductive film is an Al-based electrically conductive film including Al or an alloy mainly containing an Al.
1. An elastic wave device comprising:
a piezoelectric substrate;
a first multilayer electrically conductive film disposed on the piezoelectric substrate; and
a second multilayer electrically conductive film disposed on the piezoelectric substrate; wherein
the first multilayer electrically conductive film defines at least an IDT including a plurality of electrode fingers and a first wiring pattern connected to the IDT;
the second multilayer electrically conductive film defines at least an electrode pad and a second wiring pattern leading to the electrode pad;
at least one contact portion where the second wiring pattern is overlapped with the first wiring pattern is provided;
the second multilayer electrically conductive film includes a bottom electrically conductive film including Al or an alloy mainly containing Al;
the first multilayer electrically conductive film includes a top electrically conductive film including Ti and an Al-based electrically conductive film including Al or an alloy mainly containing Al and disposed lower than the top electrically conductive film; and
the first multilayer electrically conductive film further includes an electrically conductive film that is stacked lower and has a higher density than the Al-based electrically conductive film and includes Pt or an alloy mainly including Pt.
2. The elastic wave device according to claim 1 , wherein the first multilayer electrically conductive film further includes a Ti film stacked between the Al-based electrically conductive film and the high-density electrically conductive film.
3. The elastic wave device according to claim 1 , wherein the second multilayer electrically conductive film further includes a Ti film disposed higher than the bottom electrically conductive film and an Al-based electrically conductive film disposed higher than the Ti film and including Al or an alloy mainly containing Al.
4. The elastic wave device according to claim 1 , further comprising a package, wherein an elastic wave filter chip including the piezoelectric substrate and the first and second multilayer electrically conductive films is flip-chip bonded to the package.