Vertical gallium nitride semiconductor device and epitaxial substrate
Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film ( 65 ) is provided on a gallium nitride substrate ( 63 ). A layer region ( 67 ) is provided in the gallium nitride substrate ( 63 ) and the gallium nitride epitaxial film ( 65 ). An interface between the gallium nitride substrate ( 43 ) and the gallium nitride epitaxial film ( 65 ) is positioned in the layer region ( 67 ). In the layer region ( 67 ), a peak value of donor impurity along an axis from the gallium nitride substrate ( 63 ) to the gallium nitride epitaxial film ( 65 ) is 1×10 18 cm −3 or more. The donor impurity is at least either silicon or germanium.
1. A vertical gallium nitride semiconductor device furnished with:
a gallium nitride support base of n + -type conductivity, therein having a given carrier concentration;
a gallium nitride epitaxial film of n − -type conductivity provided on a principal surface of said gallium nitride support base, therein defining an interface between said gallium nitride support base and said gallium nitride epitaxial film;
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride support base and said gallium nitride epitaxial film, where either said gallium nitride support base or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride support base to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of magnesium, beryllium, calcium, zinc, or cadmium as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region;
a gate insulating film provided on said gallium nitride epitaxial film;
a gate electrode provided on said gate insulating film;
a p-type conductivity region provided on said gallium nitride epitaxial film;
an n + -type conductivity region provided in said p-type conductivity region;
a source electrode provided on said n + -type conductivity region of said gallium nitride epitaxial film; and
a drain electrode provided on a back side of said gallium nitride support base.
2. A vertical gallium nitride semiconductor device furnished with:
a gallium nitride support base of n + -type conductivity, therein having a given carrier concentration;
a gallium nitride epitaxial film of n − -type conductivity provided on a principal surface of said gallium nitride support base, therein defining an interface between said gallium nitride support base and said gallium nitride epitaxial film;
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride support base and said gallium nitride epitaxial film, where either said gallium nitride support base or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride support base to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of magnesium, beryllium, calcium, zinc, or cadmium as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region;
a Schottky electrode provided on said gallium nitride epitaxial film; and
an ohmic electrode provided on a back side of said gallium nitride support base.
3. A vertical gallium nitride semiconductor device furnished with:
a gallium nitride support base of n + -type conductivity, therein having a given carrier concentration;
a gallium nitride epitaxial film of n − -type conductivity provided on a principal surface of said gallium nitride support base, therein defining an interface between said gallium nitride support base and said gallium nitride epitaxial film;
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride support base and said gallium nitride epitaxial film, where either said gallium nitride support base or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride support base to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of magnesium, beryllium, calcium, zinc, or cadmium as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region;
a gallium nitride epitaxial film of p-type conductivity provided on said gallium nitride epitaxial film;
a first ohmic electrode provided on said gallium nitride epitaxial film of p-type conductivity; and
a second ohmic electrode provided on a back side of said gallium nitride support base.
4. The vertical gallium nitride semiconductor device set forth in any of claims 1 through 3 , characterized in that:
donor concentration of said gallium nitride epitaxial film is 5×10 17 cm −3 or less, and
said donor impurity of said gallium nitride support base includes oxygen or silicon.
5. An epitaxial substrate furnished with:
a gallium nitride substrate of n + -type conductivity, therein having a given carrier concentration; and
a gallium nitride epitaxial film of n − -type conductivity provided on said gallium nitride substrate, therein defining an interface between said gallium nitride substrate and said gallium nitride epitaxial film; and
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride substrate and said gallium nitride epitaxial film, where either said gallium nitride substrate or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride substrate to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of magnesium, beryllium, calcium, zinc, or cadmium as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region.
6. An epitaxial substrate furnished with:
a gallium nitride substrate of n + -type conductivity, therein having a given carrier concentration;
a gallium nitride epitaxial film of n − -type conductivity provided on said gallium nitride substrate, therein defining an interface between said gallium nitride substrate and said gallium nitride epitaxial film;
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride substrate and said gallium nitride epitaxial film, where either said gallium nitride substrate or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride substrate to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of magnesium, beryllium, calcium, zinc, or cadmium as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region; and
a gallium nitride epitaxial film of p-type conductivity provided on said gallium nitride epitaxial film of n-type conductivity.
7. The epitaxial substrate set forth in claim 5 or 6 , characterized in that:
donor concentration of said gallium nitride epitaxial film is 5×10 17 cm −3 or less, and
said gallium nitride substrate includes oxygen or silicon as a donor impurity.
8. A vertical gallium nitride semiconductor device furnished with:
a gallium nitride support base of n + -type conductivity, therein having a given carrier concentration;
a gallium nitride epitaxial film of n − -type conductivity provided on a principal surface of said gallium nitride support base, therein defining an interface between said gallium nitride support base and said gallium nitride epitaxial film;
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride support base and said gallium nitride epitaxial film, where either said gallium nitride support base or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride support base to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of iron titanium, cobalt, nickel, vanadium, chromium, or manganese as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region;
a gate insulating film provided on said gallium nitride epitaxial film;
a gate electrode provided on said gate insulating film;
a p-type conductivity region provided on said gallium nitride epitaxial film;
an n + -type conductivity region provided in said p-type conductivity region;
a source electrode provided on said n + -type conductivity region of said gallium nitride epitaxial film; and
a drain electrode provided on a back side of said gallium nitride support base.
9. A vertical gallium nitride semiconductor device furnished with:
a gallium nitride support base of n + -type conductivity, therein having a given carrier concentration;
a gallium nitride epitaxial film of n − -type conductivity provided on a principal surface of said gallium nitride support base, therein defining an interface between said gallium nitride support base and said gallium nitride epitaxial film;
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride support base and said gallium nitride epitaxial film, where either said gallium nitride support base or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride support base to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of iron titanium, cobalt, nickel, vanadium, chromium, or manganese as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region;
a Schottky electrode provided on said gallium nitride epitaxial film; and
an ohmic electrode provided on a back side of said gallium nitride support base.
10. A vertical gallium nitride semiconductor device furnished with:
a gallium nitride support base of n + -type conductivity, therein having a given carrier concentration;
a gallium nitride epitaxial film of n − -type conductivity provided on a principal surface of said gallium nitride support base, therein defining an interface between said gallium nitride support base and said gallium nitride epitaxial film;
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride support base and said gallium nitride epitaxial film, where either said gallium nitride support base or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride support base to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of iron titanium, cobalt, nickel, vanadium, chromium, or manganese as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region;
a gallium nitride epitaxial film of p-type conductivity provided on said gallium nitride epitaxial film;
a first ohmic electrode provided on said gallium nitride epitaxial film of p-type conductivity; and
a second ohmic electrode provided on a back side of said gallium nitride support base.
11. An epitaxial substrate furnished with:
a gallium nitride substrate of n + -type conductivity, therein having a given carrier concentration; and
a gallium nitride epitaxial film of n − -type conductivity provided on said gallium nitride substrate, therein defining an interface between said gallium nitride substrate and said gallium nitride epitaxial film; and
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride substrate and said gallium nitride epitaxial film, where either said gallium nitride substrate or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride substrate to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of iron titanium, cobalt, nickel, vanadium, chromium, or manganese as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region.
12. An epitaxial substrate furnished with:
a gallium nitride substrate of n + -type conductivity, therein having a given carrier concentration;
a gallium nitride epitaxial film of n − -type conductivity provided on said gallium nitride substrate, therein defining an interface between said gallium nitride substrate and said gallium nitride epitaxial film;
a laminar region, of not greater than 1 μm thickness, including the interface between said gallium nitride substrate and said gallium nitride epitaxial film, where either said gallium nitride substrate or said gallium nitride epitaxial film has at least either silicon or germanium as donor impurities at a concentration, along an axis from said gallium nitride substrate to said gallium nitride epitaxial film, of not less than 1×10 18 cm −3 , wherein the presence of iron titanium, cobalt, nickel, vanadium, chromium, or manganese as unintentional impurities in the vertical gallium nitride semiconductor device assumes a concentration profile whose peak resides in said laminar region; and
a gallium nitride epitaxial film of p-type conductivity provided on said gallium nitride epitaxial film of n-type conductivity.
13. The vertical gallium nitride semiconductor device set forth in claim 1 , characterized in that the peak concentration of magnesium, beryllium, calcium, zinc, or cadmium is 5×10 14 cm −3 to 1×10 16 cm −3 .
14. The vertical gallium nitride semiconductor device set forth in claim 2 , characterized in that the peak concentration of magnesium, beryllium, calcium, zinc, or cadmium is 5×10 14 cm −3 to 1×10 16 cm −3 .
15. The vertical gallium nitride semiconductor device set forth in claim 3 , characterized in that the peak concentration of magnesium, beryllium, calcium, zinc, or cadmium is 5×10 14 cm −3 to 1×10 16 cm −3 .
16. The vertical gallium nitride semiconductor device set forth in claim 5 , characterized in that the peak concentration of magnesium, beryllium, calcium, zinc, or cadmium is 5×10 14 cm −3 to 1×10 16 cm −3 .
17. The vertical gallium nitride semiconductor device set forth in claim 6 , characterized in that the peak concentration of magnesium, beryllium, calcium, zinc, or cadmium is 5×10 14 cm −3 to 1×10 16 cm −3 .
18. The vertical gallium nitride semiconductor device set forth in claim 8 , characterized in that the peak concentration of iron, titanium, cobalt, nickel, vanadium, chromium, or manganese is 1×10 15 cm −3 to 1×10 17 cm −3 .
19. The vertical gallium nitride semiconductor device set forth in claim 9 , characterized in that the peak concentration of iron, titanium, cobalt, nickel, vanadium, chromium, or manganese is 1×10 15 cm −3 to 1×10 17 cm −3 .
20. The vertical gallium nitride semiconductor device set forth in claim 10 , characterized in that the peak concentration of iron, titanium, cobalt, nickel, vanadium, chromium, or manganese is 1×10 15 cm −3 to 1×10 17 cm −3 .
21. The vertical gallium nitride semiconductor device set forth in claim 11 , characterized in that the peak concentration of iron, titanium, cobalt, nickel, vanadium, chromium, or manganese is 1×10 15 cm −3 to 1×10 17 cm −3 .
22. The vertical gallium nitride semiconductor device set forth in claim 12 , characterized in that the peak concentration of iron, titanium, cobalt, nickel, vanadium, chromium, or manganese is 1×10 15 cm −3 to 1×10 17 cm −3 .