Optoelectronic semiconductor device and manufacturing method thereof

1. An optoelectronic semiconductor device comprising:

a semiconductor system converting between light energy and electrical energy, wherein said semiconductor system has a plurality of surfaces;

an interfacial layer formed on at least two surfaces of the semiconductor system;

an electrical conductor supporting the semiconductor system; and

electrical connectors arranged in a geometric pattern for uniform current spreading in the semiconductor system and passing through the interfacial layer and electrically connecting to the semiconductor system and the electrical conductor.

2. The optoelectronic semiconductor device of claim 1 , wherein the optoelectronic semiconductor system comprises a light-emitting diode.

3. The optoelectronic semiconductor device of claim 1 , wherein the interfacial layer is formed between the semiconductor system and the electrical conductor.

4. The optoelectronic semiconductor device of claim 1 , wherein the interfacial layer overlays on at least one side surface of the semiconductor system.

5. The optoelectronic semiconductor device of claim 1 , wherein the interfacial layer has a refraction index between the semiconductor system and an environmental medium.

6. The optoelectronic semiconductor device of claim 1 , further comprising a reflector located between the semiconductor system and the electrical conductor for reflecting light from the semiconductor system.

7. The optoelectronic semiconductor device of claim 1 , further comprising a first coupling layer and a second coupling layer respectively arranged on opposite sides of the electrical connectors and electrically connected with each other.

8. The optoelectronic semiconductor device of claim 1 , further comprising a first coupling layer electrically connected to the semiconductor system and being entered into by at least part of the electrical connectors.

9. The optoelectronic semiconductor device of claim 1 , further comprising a first coupling layer electrically connected to the semiconductor system and reflecting light from the semiconductor system.

10. The optoelectronic semiconductor device of claim 1 , further comprising:

a first coupling layer electrically connected to the semiconductor system; and

a reflector located between the first coupling layer and the semiconductor system reflecting light from the semiconductor system.

11. The optoelectronic semiconductor device of claim 1 , further comprising a reflector located between the electrical connectors and the semiconductor system and contacting with the electrical connectors.

12. The optoelectronic semiconductor device of claim 1 , wherein the electrical connectors have gaps varied in a configuration selected from the group consisting of constant periodicity, variable periodicity, quasi-periodicity, geometric series, and randomness.

13. The optoelectronic semiconductor device of claim 1 , wherein the electrical connectors comprise an electrical connector being formed in a shape selected from the group consisting of rectangle, circle, ellipse, triangle, hexagon, irregular shape, and the combination thereof.

14. The optoelectronic semiconductor device of claim 1 , wherein the electrical connector comprises a rough surface.

15. The optoelectronic semiconductor device of claim 1 , further comprising:

a first intermediate layer electrically connecting to the semiconductor system; and

a second intermediate layer formed on the electrical connectors and between the first intermediate layer and the electrical connectors.

16. The optoelectronic semiconductor device of claim 1 , further comprising:

an electrode formed on the semiconductor system; and

an insulating region corresponding to a position of the electrode and substantially arranged on the same horizontal plane with the electrical connectors.

17. The optoelectronic semiconductor device of claim 1 , further comprising:

an electrode formed on the semiconductor system; and

an insulating region corresponding to a position of the electrode and arranged on a different horizontal plane from the electrical connectors.

18. The optoelectronic semiconductor device of claim 1 , wherein the interfacial layer comprises a wavelength converting material.

19. The optoelectronic semiconductor device of claim 1 , further comprising:

a passive light-emitting layer formed on a surface of the semiconductor system opposite to the electrical connectors, and emitting output light in response to input light from the semiconductor system, wherein the input light and the output light have a different wavelength.

20. The optoelectronic semiconductor device of claim 1 , further comprising a light extraction surface formed on a primary light output surface of the semiconductor system and in a configuration selected from the group consisting of rough surface, regular convex and concave structure, irregular convex and concave structure, and photonic crystal.

21. An optoelectronic semiconductor device comprising:

a semiconductor system of at least two semiconductor layers and an active layer inbetween the semiconductor layers, wherein said semiconductor system has a plurality of surfaces;

an interfacial layer formed on at least two surfaces of the semiconductor system;

an electrical conductor supporting the semiconductor system; and

an electrical connector below the semiconductor system and passing through the interfacial layer to electrically connect to the semiconductor system and the electrical conductor.

22. The optoelectronic semiconductor device of claim 21 , wherein the optoelectronic semiconductor system comprises a light-emitting diode and further comprises an upper electrode above the semiconductor system and a lower electrode below the electrical conductor.

23. The optoelectronic semiconductor device of claim 21 , wherein the electrical conductor comprises an electrode.