N-type transistor, production methods for n-type transistor and n-type transistor-use channel, and production method of nanotube structure exhibiting n-type semiconductor-like characteristics
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor 1 comprising a source electrode 2 , a drain electrode 3 , a gate electrode 4 and the n-type channel 5 having a nanotube-shaped structure and provided between the source electrode 2 and the drain electrode 3.
1. A method for manufacturing a channel for an n-type transistor, wherein the method comprises:
forming a film of a nitrogenous compound directly on a nanotube-shaped structure exhibiting p-type semiconductive properties using a thermal CVD technique, at a temperature of said nanotube-shaped structure of 500° C. or higher and 1600° C. or lower; and
changing a nanotube-shaped structure exhibiting p-type semiconductive properties to said nanotube-shaped structure exhibiting n-type semiconductive properties.
2. The method for manufacturing a channel for an n-type transistor according to claim 1 , wherein said forming said film of the nitrogenous compound is performed under normal pressure.
3. The method for manufacturing a channel for an n-type transistor according to claim 1 , wherein said forming said film of the nitrogenous compound is performed in an atmosphere of oxygen concentration of 1 volume % or less.
4. The method for manufacturing a channel for an n-type transistor according to claim 1 , wherein said forming said film of the nitrogenous compound is performed in a reducing atmosphere.
5. A method for manufacturing a nanotube-shaped structure exhibiting n-type semiconductive properties, wherein the method comprises:
forming a film of a nitrogenous compound directly on a nanotube-shaped structure exhibiting p-type semiconductive properties using a thermal CVD technique, at a temperature of said nanotube-shaped structure of 500° C. or higher and 1600° C. or lower; and
changing a nanotube-shaped structure exhibiting p-type semiconductive properties to said nanotube-shaped structure exhibiting n-type semiconductive properties.
6. The method for manufacturing a nanotube-shaped structure exhibiting the n-type semiconductive properties according to claim 5 , wherein said forming the film of the nitrogenous compound is performed under normal pressure.
7. The method for manufacturing the nanotube-shaped structure exhibiting the n-type semiconductive properties according to claim 5 , wherein said forming said film of the nitrogenous compound is performed in an atmosphere of oxygen concentration of 1 volume % or less.
8. The method for manufacturing the nanotube-shaped structure exhibiting the n-type semiconductive properties according to claim 5 , wherein said forming said film of the nitrogenous compound is performed in a reducing atmosphere.