Quantum dot electroluminescence device and method of fabricating the same
A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.
1. A method of fabricating a quantum dot
electroluminescence device comprising:
forming an anode electrode on an insulating substrate;
forming a hole transfer layer composed of p-type polymer semiconductor on the anode electrode;
two-dimensionally arraying synthesized quantum dots on the hole transfer layer to form a quantum dot luminescence layer;
applying a cross-link agent to the quantum dot luminescence layer so as to cross-link the quantum dots and improve a chemical stability of the quantum dot luminescence layer;
performing a wet chemical process on the quantum dot luminescence layer so as to form an electron transfer layer; and
forming a cathode electrode on the electron transfer layer,
wherein the cross-linking comprises supplying the quantum dot luminescence layer into a solution including the cross-link agent and heating under an inert gas ambient to maintain for a predetermined time,
wherein the electron transfer layer is formed by a wet-processed thin film formation which includes coating on top of the quantum dot luminescent layer with a precursor solution including a precursor material and an organic solvent wherein the precursor material is organo-titanate or organo-zirconate, and performing a thermal curing treatment.
2. The method of claim 1 , wherein the cross-link agent comprises chain organic molecules selected from diaminoalkane, dithiol, and dicarboxylate having amine functional group (—NH 2 ), thiol (—SH), and carboxyl functional group (—COO—) at both ends of the chain.
3. The method of claim 1 , wherein the hole transfer layer comprises at least one or more polymer material selected from the group consisting of PEDOT (poly(3,4-ethylenedioxythiophene)), PSS (poly(4-styrenesulfonate)), PPV (poly(p-phenylene vinylenes)), MEH-PPV, and PVK (poly(9-vinlycarbazole)).
4. The method of claim 3 , wherein the polymer hole transfer layer is formed by coating the top of the first electrode with a solution including a precursor material, and performing a thermal curing treatment.
5. The method of claim 1 , wherein the electron transfer layer is composed of amorphous TiO 2 or ZrO 2 .
6. The method of claim 1 , wherein the quantum dots are formed by a wet chemical process supplying at least one or more precursor material into an organic solvent, and synthesizing quantum dots coordinate-bonded by the organic solvent to have confined growth size.
7. A method of fabricating a quantum dot electroluminescence device comprising:
forming an anode electrode on an insulating substrate;
forming a hole transfer layer composed of p-type polymer semiconductor on the anode electrode;
two-dimensionally arraying synthesized quantum dots on the hole transfer layer to form a quantum dot luminescence layer;
applying a cross-link agent comprising chain organic molecules selected from the group consisting of diaminoalkane and dicarboxylate, having amine functional groups (—NH 2 ) or carboxyl functional groups (—COO—) at both ends of the chain, to the quantum dot luminescence layer so as to cross-link the quantum dots and improve a chemical stability of the quantum dot luminescence layer;
performing a wet chemical process on the quantum dot luminescence layer so as to form an electron transfer layer; and
forming a cathode electrode on the electron transfer layer, wherein the cross-linking comprises supplying the quantum dot luminescence layer into a solution including the cross-link agent under an inert gas ambient to maintain for a predetermined time,
wherein the electron transfer layer is formed by a wet-processed thin film formation which includes coating on top of the quantum dot luminescent layer with a precursor solution including a precursor material and an organic solvent wherein the precursor material is organo-titanate or organo-zirconate, and performing a thermal curing treatment.