Semiconductor device and manufacturing method thereof
View Patent ↗An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1. A method of manufacturing a semiconductor device comprising:
forming an oxide semiconductor film over a substrate; and
etching the oxide semiconductor film by using a gas containing at least one of fluorine and chlorine to form a channel region of a thin film transistor,
wherein the oxide semiconductor film comprises In—Ga—Zn—O based oxide semiconductor.
2. The method according to claim 1 wherein the gas comprises at least one selected from the group consisting of Cl 2 , BCl 3 , SiCl 4 and CCl 4 .
3. The method according to claim 1 wherein the gas comprises at least one selected from the group consisting of CF 4 , NF 3 , SF 6 and CHF 3 .
4. The method according to claim 1 further comprising:
heating the oxide semiconductor film before etching.
5. The method according to claim 1 wherein the In-Ga-Zn-O based oxide semiconductor is In-Ga-Zn-O based amorphous oxide semiconductor.
6. A method of manufacturing a semiconductor device comprising:
forming an oxide semiconductor film over a substrate; and
forming the oxide semiconductor film into an island-shaped region by dry etching using a gas containing at least one of fluorine and chlorine,
wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor.
7. The method according to claim 6 wherein the gas comprises at least one selected from the group consisting of Cl 2 , BCl 3 , SiCl 4 and CCl 4 .
8. The method according to claim 6 wherein the gas comprises at least one selected from the group consisting of CF 4 , NF 3 , SF 6 and CHF 3 .
9. The method according to claim 6 further comprising:
heating the oxide semiconductor film before dry etching.
10. The method according to claim 6 wherein the In-Ga-Zn-O based oxide semiconductor is In-Ga-Zn-O based amorphous oxide semiconductor.
11. A method of manufacturing a semiconductor device comprising:
forming an oxide semiconductor film over a substrate; and
forming the oxide semiconductor film by into an island-shaped region by dry etching using a gas containing at least one of fluorine and chlorine,
wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor.
12. A method according to claim 11 wherein the gas further includes an oxygen gas.
13. The method according to claim 11 further comprising:
heating the oxide semiconductor film before etching.
14. The method according to claim 11 wherein the In-Ga-Zn-O based oxide semiconductor is In-Ga-Zn-O based amorphous oxide semiconductor.
15. A method of manufacturing a semiconductor device comprising:
forming an oxide semiconductor film over a substrate;
forming a mask of a resist over the oxide semiconductor film; and
selectively etching the oxide semiconductor film by using the mask and a gas containing at least one of fluorine and chlorine,
wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor.
16. The method according to claim 15 wherein the gas comprises at least one selected from the group consisting of Cl 2 , BCl 3 , SiCl 4 and CCl 4 .
17. The method according to claim 15 wherein the gas comprises at least one selected from the group consisting of CF 4 , NF 3 , SF 6 and CHF 3 .
18. The method according to claim 15 wherein a material of the resist is a photosensitizing agent.
19. The method according to claim 15 further comprising:
heating the oxide semiconductor film before etching.
20. The method according to claim 15 wherein the In-Ga-Zn-O based oxide semiconductor is In-Ga-Zn-O based amorphous oxide semiconductor.