Method for fabricating flexible semiconductor electrode, semiconductor electrode fabricated thereby, and solar cell using the semiconductor electrode
Disclosed herein is a method for fabricating a flexible semiconductor electrode including preparing a first substrate having a semiconductor layer disposed on a release layer, forming a second substrate having an adhesive layer disposed on a conductive material-coated flexible substrate, and pressing the first substrate against the second substrate under heat effective to transfer the semiconductor layer from the first substrate to the second substrate. The method allows for a flexible semiconductor electrode to be fabricated at low temperatures in a stable manner, and the flexible semiconductor electrode allows for high photoelectric conversion efficiency in a solar cell.
1. A method for fabricating a flexible semiconductor electrode, the method comprising:
preparing a first substrate comprising a semiconductor layer disposed on a release layer;
forming a second substrate comprising an adhesive layer disposed on a conductive material-coated flexible substrate; and
pressing the first substrate against the second substrate under heat effective to transfer the semiconductor layer from the first substrate to the second substrate to form the flexible semiconductor electrode;
wherein preparing the first substrate comprises:
depositing a catalytic metal layer on a substrate;
coating the catalytic metal layer with the semiconductor layer;
heating the semiconductor layer; and
forming the release layer at an interface between the catalytic metal layer and the semiconductor layer, and
wherein the semiconductor layer comprises a metal oxide selected from the group consisting of TiO 2 , ZnO, Nb 2 O 5 , WO 3 , SnO 2 and MgO.
2. The method as set forth in claim 1 , wherein the first substrate comprises a material selected from the group consisting of glass, metal, and silicon.
3. The method as set forth in claim 1 , wherein the catalytic metal layer comprises a metal selected from the group consisting of nickel, iron, cobalt, palladium, platinum, and alloys thereof.
4. The method as set forth in claim 1 , wherein a thickness of the semiconductor layer is about 1 micrometer to about 30 micrometers.
5. The method as set forth in claim 1 , wherein the semiconductor layer comprises particles having an average longest grain dimension of about 1 nanometer to about 200 nanometers.
6. The method as set forth in claim 1 , wherein the release layer comprises a material selected from the group consisting of carbon nanotubes, ZnO nanowires, SiC nanowires, metal nanowires, and Si nanowires.
7. The method as set forth in claim 6 , wherein the carbon nanotubes are formed using chemical vapor deposition.
8. The method as set forth in claim 1 , wherein the second substrate comprises a polymer selected from the group consisting of polyethylene terephthalate, polyethylene naphathalate, polyimides, polymeric hydrocarbons, celluloses, plastics, polycarbonates, polystyrenes, and combinations thereof.
9. The method as set forth in claim 1 , wherein the adhesive layer comprises a gold metal foil, a silver metal foil, or a polymeric adhesive.
10. The method as set forth in claim 1 , wherein the pressing the first substrate against the second substrate under heat is conducted at a pressure of about 0.1 megaPascals to about 1 megaPacal.
11. The method as set forth in claim 1 , wherein the pressing the first substrate against the second substrate under heat is conducted at a temperature of about 100 degrees Celsius to about 300 degrees Celsius.
12. The method as set forth in claim 1 , wherein the pressing the first substrate against the second substrate under heat is conducted for about 10 seconds to about 180 seconds.