Magnetoresistance effect element and magnetoresistive random access memory using the same
View Patent ↗A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.
1. A magnetoresistive effect element comprising:
a first magnetic layer having an invariable magnetization direction;
a second magnetic layer having a variable magnetization direction, and containing at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selected from the group consisting of Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from the group consisting of V, Cr, and Mn; and
a first spacer layer formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material,
wherein a bidirectional electric current flowing through the first magnetic layer, the first spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.
2. The element according to claim 1 , wherein a content of said at least one element selected from the group consisting of Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au is 30 (inclusive) to 70 (inclusive) at %.
3. The element according to claim 1 , wherein a composition ratio of said at least one element selected from the group consisting of V, Cr, and Mn to said at least one element selected from the group consisting of Fe, Co, and Ni is not more than 1.
4. The element according to claim 1 , wherein a portion of the second magnetic layer comprises an L1 0 ordered phase having an FCT structure.
5. The element according to claim 1 , wherein the second magnetic layer is ferrimagnetic.
6. The element according to claim 1 , further comprising:
a second spacer layer made of a nonmagnetic material, and formed on a surface of the second magnetic layer opposite from a surface facing the first spacer layer; and
a third magnetic layer having an antiparallel magnetization direction to the magnetization direction in the first magnetic layer, and formed on a surface of the second spacer layer opposite from a surface facing the second magnetic layer.
7. The element according to claim 1 , further comprising a first interface layer formed between the second magnetic layer and the first spacer layer, and containing not less than 50 at % of at least one element selected from the group consisting of Fe, Co, and Ni.
8. The element according to claim 6 , further comprising:
a first interface layer formed between the second magnetic layer and the first spacer layer,
a second interface layer formed between the second magnetic layer and the second spacer layer,
wherein the first and second interface layers containing not less than 50 at % of at least one element selected from the group consisting of Fe, Co, and Ni.
9. The element according to claim 7 , wherein the first interface layer has a portion of BCC structure.
10. The element according to claim 7 , wherein the first interface layer has a thickness of 0.5 (inclusive) to 3.0 (inclusive) nm.
11. The element according to claim 1 , wherein the first magnetic layer and the second magnetic layer have magnetization substantially perpendicular to surfaces through which the first magnetic layer, the first spacer layer, and the second magnetic layer oppose each other.
12. A magnetoresistive random access memory comprising:
a memory cell array including a plurality of memory cells each including a magnetoresistive effect element cited in claim 1 as a memory element; and
a current supply circuit configured to bidirectionally supply an electric current to the memory cell.
13. A magnetoresistive effect element comprising:
a first magnetic layer having an invariable magnetization direction;
a second magnetic layer having a variable magnetization direction, and made of an MnAl alloy containing 30 (inclusive) to 70 (inclusive) at % of Mn, the second magnetic layer containing one of a ferromagnetic material and a ferrimagnetic material; and
a first spacer layer formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material,
wherein a bidirectional electric current flowing through the first magnetic layer, the first spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.
14. The element according to claim 13 , wherein the second magnetic layer made of MnAl contains at least one element selected from the group consisting of Fe, Co, and Ni at a composition ratio of not more than 1 to the Mn element.
15. The element according to claim 13 , wherein the second magnetic layer contains at least one element selected from the group consisting of Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au at a composition ratio of not more than 1 to the Al element.
16. The element according to claim 13 , wherein a portion of the second magnetic layer has an L1 0 ordered phase having an FCT structure.
17. The element according to claim 13 , further comprising:
a second spacer layer made of a nonmagnetic material, and formed on a surface of the second magnetic layer opposite from a surface facing the first spacer layer; and
a third magnetic layer having an antiparallel magnetization direction to the magnetization direction in the first magnetic layer, and formed on a surface of the second spacer layer opposite from a surface facing the second magnetic layer.
18. The element according to claim 13 , further comprising a first interface layer formed between the second magnetic layer and the first spacer layer, and containing not less than 50 at % of at least one element selected from the group consisting of Fe, Co, and Ni.
19. The element according to claim 17 , further comprising:
a first interface layer formed between the second magnetic layer and the first spacer layer,
a second interface layer formed between the second magnetic layer and the second spacer layer,
wherein the first and second interface layers containing not less than 50 at % of at least one element selected from the group consisting of Fe, Co, and Ni.
20. The element according to claim 18 , wherein the first interface layer has a portion of BCC structure.
21. The element according to claim 18 , wherein the first interface layer has a thickness of 0.5 (inclusive) to 3.0 (inclusive) nm.
22. The element according to claim 13 , wherein the first magnetic layer and the second magnetic layer have magnetization substantially perpendicular to surfaces through which the first magnetic layer, the first spacer layer, and the second magnetic layer oppose each other.
23. A magnetoresistive random access memory comprising:
a memory cell array including a plurality of memory cells each including a magnetoresistive effect element cited in claim 13 as a memory element; and
a current supply circuit configured to bidirectionally supply an electric current to the memory cell.