Light emitting device and light emitting device package
A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa.
1. A light emitting device comprising:
a conductive substrate;
a solder bonding layer on the conductive substrate;
a diffusion barrier layer on the solder bonding layer;
an adhesive layer on the diffusion barrier layer;
a reflective layer on the adhesive layer; and
a light emitting semiconductor layer on the reflective layer,
wherein the bonding layer, the diffusion barrier layer and the adhesive layer include a metal or an alloy having young's modulus of 200 GPa or less, and the diffusion barrier layer or the adhesive layer includes a metal or an alloy including Cu or Nb, and
the adhesive layer includes Ti—Ni, the diffusion barrier layer includes Cu, and the bonding layer includes Au—Sn.
2. The light emitting device as claimed in claim 1 , wherein the bonding layer is formed of a metal or an alloy comprising at least one selected from the group consisting of Sn, In, Ga, Bi, Pb, and Au.
3. A light emitting device comprising:
a conductive substrate;
a solder bonding layer on the conductive substrate;
a diffusion barrier layer on the solder bonding layer;
an adhesive layer on the diffusion barrier layer;
a reflective layer on the adhesive layer; and
a light emitting semiconductor layer on the reflective layer,
wherein the bonding layer, the diffusion barrier layer and the adhesive layer include a metal or an alloy having young's modulus of 200 GPa or less, and the diffusion barrier layer or the adhesive layer includes a metal or an alloy including Cu or Nb, and
the adhesive layer includes Nb, the diffusion barrier layer includes Cu, and the bonding layer includes Au—Sn.
4. The light emitting device as claimed in claim 3 , wherein the bonding layer is formed of a metal or an alloy comprising at least one selected from the group consisting of Sn, In, Ga, Bi, Pb, and Au.
5. A light emitting device comprising:
a conductive substrate;
a solder bonding layer on the conductive substrate;
a diffusion barrier layer on the solder bonding layer;
an adhesive layer on the diffusion barrier layer;
a reflective layer on the adhesive layer; and
a light emitting semiconductor layer on the reflective layer,
wherein the bonding layer, the diffusion barrier layer and the adhesive layer include a metal or an alloy having young's modulus of 200 GPa or less, and the diffusion barrier layer or the adhesive layer includes a metal or an alloy including Cu or Nb, and
the adhesive layer includes Nb, the diffusion barrier layer includes Nb—Sn, and the bonding layer includes Au—In.
6. The light emitting device as claimed in claim 5 , wherein the bonding layer is formed of a metal or an alloy comprising at least one selected from the group consisting of Sn, In, Ga, Bi, Pb, and Au.
7. A light emitting device comprising:
a conductive substrate;
a solder bonding layer on the conductive substrate;
a diffusion barrier layer on the solder bonding layer;
an adhesive layer on the diffusion barrier layer;
a reflective layer on the adhesive layer; and
a light emitting semiconductor layer on the reflective layer,
wherein the bonding layer, the diffusion barrier layer and the adhesive layer include a metal or an alloy having young's modulus of 200 GPa or less, and the diffusion barrier layer or
the adhesive layer includes a metal or an alloy including Cu or Nb, and the adhesive layer includes Nb, the diffusion barrier layer includes Nb, and the bonding layer includes Au—Sn.
8. The light emitting device as claimed in claim 7 , wherein the bonding layer is formed of a metal or an alloy comprising at least one selected from the group consisting of Sn, In, Ga, Bi, Pb, and Au.