IP Library Granted Patent US 7,928,910
Granted Patent B2
US 7,928,910 · App. 11/886,157 · Granted Apr 19, 2011

Wireless chip and electronic device having wireless chip

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,928,910
App. No.
11/886,157
Granted
Apr 19, 2011
Kind
B2
Abstract

It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.

Claims (85)

1. A wireless chip comprising:

an antenna including a first conductive layer, a second conductive layer functioning as a ground contact body, a power feeding layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer,

a chip including a field-effect transistor, and

a third conductive layer connecting the antenna and the chip to each other,

wherein the first conductive layer is formed on a first surface of the dielectric layer,

wherein the second conductive layer is formed on a second surface of the dielectric layer, and

wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.

2. The wireless chip according to claim 1 , wherein the third conductive layer includes a bump, a conductive paste, an antistrophic conductive adhesive, or an antistrophic conductive film.

3. The wireless chip according to claim 1 , wherein the field-effect transistor includes an n-type single crystalline silicon substrate, a p-type single crystalline silicon substrate, a GaAs substrate, an InP substrate, a GaN substrate, a SiC substrate, a sapphire substrate, a ZnSe substrate, or an SOI substrate.

4. The wireless chip according to claim 1 , wherein a connecting portion of the antenna and the chip is filled with an under fill.

5. The wireless chip according to claim 4 , wherein the under fill includes an epoxy resin, an acrylic resin, or a polyimide resin.

6. The wireless chip according to claim 1 , wherein the wireless chip includes a high-frequency circuit.

7. The wireless chip according to claim 1 , wherein the dielectric layer includes one or more materials selected from alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.

8. The wireless chip according to claim 1 , the dielectric layer includes one or more materials selected from epoxy resin, phenol resin, polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and poly fumarate.

9. The wireless chip according to claim 1 is included in an electronic device.

10. The electronic device according to claim 9 , wherein the electronic device is a liquid crystal display device, an EL display device, a television device, a mobile phone, a printer, a camera, a personal computer, a goggle with earphone, a speaker device, a headphone, a navigation device, or an electronic key.

11. A wireless chip comprising:

an antenna including a first conductive layer, a second conductive layer functioning as a ground contact body, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer,

a wiring substrate,

a chip including a field-effect transistor,

a sensor device,

a third conductive layer connecting the wiring substrate and the antenna to each other,

a fourth conductive layer connecting the wiring substrate and the chip to each other, and

a fifth conductive layer connecting the wiring substrate and the sensor device to each other.

12. The wireless chip according to claim 11 , wherein the antenna and the chip are electrically connected using the third conductive layer and the fourth conductive layer.

13. The wireless chip according to claim 11 , wherein the third and the fourth conductive layers includes a bump, a conductive paste, an antistrophic conductive adhesive, or an antistrophic conductive film.

14. The wireless chip according to claim 11 , wherein the field-effect transistor includes an n-type single crystalline silicon substrate, a p-type single crystalline silicon substrate, a GaAs substrate, an InP substrate, a GaN substrate, a SiC substrate, a sapphire substrate, a ZnSe substrate, or an SOI substrate.

15. The wireless chip according to claim 11 , wherein connecting portions of the antenna and the wiring substrate, the chip and the wiring substrate, and the sensor device and the wiring substrate are filled with an under fill.

16. The wireless chip according to claim 15 , wherein the under fill includes an epoxy resin, an acrylic resin, or a polyimide resin.

17. The wireless chip according to claim 11 , wherein the wireless chip includes a high-frequency circuit.

18. The wireless chip according to claim 11 , wherein the dielectric layer includes one or more materials selected from alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.

19. The wireless chip according to claim 11 , the dielectric layer includes one or more materials selected from epoxy resin, phenol resin, polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and poly fumarate.

20. The wireless chip according to claim 11 is included in an electronic device.

21. The electronic device according to claim 20 , wherein the electronic device is a liquid crystal display device, an EL display device, a television device, a mobile phone, a printer, a camera, a personal computer, a goggle with earphone, a speaker device, a headphone, a navigation device, or an electronic key.

22. The wireless chip according to claim 11 , further comprising a power feeding layer in the antenna,

wherein the first conductive layer is formed on a first surface of the dielectric layer,

wherein the second conductive layer is formed on a second surface of the dielectric layer, and

wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.

23. A wireless chip comprising:

an antenna including a first conductive layer, a second conductive layer functioning as a ground contact body, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer,

a wiring substrate,

a chip including a field-effect transistor,

a sensor device,

a battery,

a third conductive layer connecting the wiring substrate and the antenna to each other,

a fourth conductive layer connecting the wiring substrate and the chip to each other,

a fifth conductive layer connecting the wiring substrate and the sensor device to each other, and

wherein the battery is mounted on the wiring substrate.

24. The wireless chip according to claim 23 , wherein the sensor device and the chip are electrically connected using the fourth conductive layer and the fifth conductive layer.

25. The wireless chip according to claim 23 , wherein the antenna and the chip are electrically connected using the third conductive layer and the fourth conductive layer.

26. The wireless chip according to claim 23 , wherein the third and the fourth conductive layers includes a bump, a conductive paste, an antistrophic conductive adhesive, or an antistrophic conductive film.

27. The wireless chip according to claim 23 , wherein the field-effect transistor includes an n-type single crystalline silicon substrate, a p-type single crystalline silicon substrate, a GaAs substrate, an InP substrate, a GaN substrate, a SiC substrate, a sapphire substrate, a ZnSe substrate, or an SOI substrate.

28. The wireless chip according to claim 23 , wherein connecting portions of the antenna and the wiring substrate, the chip and the wiring substrate, the sensor device and the wiring substrate, and the battery and the wiring substrate are filled with an under fill.

29. The wireless chip according to claim 28 , wherein the under fill includes an epoxy resin, an acrylic resin, or a polyimide resin.

30. The wireless chip according to claim 23 , wherein the wireless chip includes a high-frequency circuit.

31. The wireless chip according to claim 23 , wherein the dielectric layer includes one or more materials selected from alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.

32. The wireless chip according to claim 23 , the dielectric layer includes one or more materials selected from epoxy resin, phenol resin, polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and poly fumarate.

33. The wireless chip according to claim 23 is included in an electronic device.

34. The electronic device according to claim 33 , wherein the electronic device is a liquid crystal display device, an EL display device, a television device, a mobile phone, a printer, a camera, a personal computer, a goggle with earphone, a speaker device, a headphone, a navigation device, or an electronic key.

35. The wireless chip according to claim 23 , further comprising a power feeding layer in the antenna,

wherein the first conductive layer is formed on a first surface of the dielectric layer,

wherein the second conductive layer is formed on a second surface of the dielectric layer, and

wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.

36. A wireless chip comprising:

an antenna including a first conductive layer, a second conductive layer functioning as a ground contact body, a power feeding layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer,

a wiring substrate,

a chip including a field-effect transistor,

a battery,

a third conductive layer connecting the wiring substrate and the antenna to each other,

a fourth conductive layer connecting the wiring substrate and the chip to each other, and

a fifth conductive layer connecting the wiring substrate and the battery to each other,

wherein the first conductive layer is formed on a first surface of the dielectric layer,

wherein the second conductive layer is formed on a second surface of the dielectric layer, and

wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.

37. The wireless chip according to claim 36 , wherein the battery and the chip are electrically connected using the fourth conductive layer and the fifth conductive layer.

38. The wireless chip according to claim 36 , wherein the antenna and the chip are electrically connected using the third conductive layer and the fourth conductive layer.

39. The wireless chip according to claim 36 , wherein the third and the fourth conductive layers includes a bump, a conductive paste, an antistrophic conductive adhesive, or an antistrophic conductive film.

40. The wireless chip according to claim 36 , wherein the field-effect transistor includes an n-type single crystalline silicon substrate, a p-type single crystalline silicon substrate, a GaAs substrate, an InP substrate, a GaN substrate, a SiC substrate, a sapphire substrate, a ZnSe substrate, or an SOI substrate.

41. The wireless chip according to claim 36 , wherein connecting portions of the antenna and the wiring substrate, the chip and the wiring substrate, and the battery and the wiring substrate are filled with an under fill.

42. The wireless chip according to claim 41 , wherein the under fill includes an epoxy resin, an acrylic resin, or a polyimide resin.

43. The wireless chip according to claim 36 , wherein the wireless chip includes a high-frequency circuit.

44. The wireless chip according to claim 36 , wherein the dielectric layer includes one or more materials selected from alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate.

45. The wireless chip according to claim 36 , the dielectric layer includes one or more materials selected from epoxy resin, phenol resin, polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and poly fumarate.

46. The wireless chip according to claim 36 is included in an electronic device.

47. The electronic device according to claim 46 , wherein the electronic device is a liquid crystal display device, an EL display device, a television device, a mobile phone, a printer, a camera, a personal computer, a goggle with earphone, a speaker device, a headphone, a navigation device, or an electronic key.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 12, 2007
From: SUZUKI, YUKIE; ARAI, YASUYUKI; YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD
Reel/Frame 019859/0404 →
Priority Claims (1)
JP 2005-103233 · Mar 31, 2005 · national
Continuity (1)
Related Publication 20080174494A1 · Jul 24, 2008