IP Library Granted Patent US 7,955,644
Granted Patent B2
US 7,955,644 · App. 11/827,169 · Granted Jun 7, 2011

Method for selectively anchoring large numbers of nanoscale structures

Assignee: California Institute of Technology
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,955,644
App. No.
11/827,169
Granted
Jun 7, 2011
Kind
B2
Abstract

A method is provided for creating composites by combining pre-fabricated nanoscale structures (nanostructures) and other materials in which the nanostructures are anchored. This method results in anchored nanostructures with their base held and encased within the anchoring material to a specified depth and with a specified length of protrusion of the nanostructures from the anchoring material. This represents a major advance over previous methods of creating composites containing nanostructures which were limited to fully embedded nanostructures or, at best, very limited and uncontrolled protrusion of nanostructures. In summary, the current method involves bringing nanostructures and anchoring materials into physical contact in a controlled fashion and optionally conducting a treatment step to complete the anchoring process.

Claims (22)

1. A method for fastening a plurality of nanoscale structures within an anchoring layer, comprising acts of:

providing a first fluid layer on an anchoring substrate;

providing a plurality of nanostructures on a growth substrate on which the nanostructures were grown, the nanostructures each having a defined height and orientation with respect to the growth substrate; and

introducing the plurality of nanostructures to a desired depth in the first fluid layer, such that the orientation of the nanostructures relative to the growth substrate is substantially maintained.

2. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 1 , further comprising an act of altering the first fluid layer to form a first anchoring layer, thereby affixing at least a portion of the nanostructures within the first anchoring layer, whereby the growth substrate may be removed, leaving at least a portion of the nanostructures affixed within the substrate.

3. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 2 , further comprising an act of removing the growth substrate to leave a set of nanostructures, where at least a portion of the nanostructures is affixed within the anchoring layer.

4. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 3 , wherein the acts of claim 3 are performed such that a portion of the anchoring layer is nanostructure-free, the method further comprising acts of:

an act of applying a second fluid layer of specified thickness on a portion of the anchoring layer that is nanostructure-free;

providing a second plurality of nanostructures on a growth substrate, the nanostructures, each having a defined height and orientation with respect to the nanostructure substrate; and

introducing the second plurality of nanostructures to a desired depth in the second fluid layer, such that the orientation of the nanostructures relative to the growth substrate is substantially maintained.

5. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 4 , further comprising an act of altering the second fluid layer to form a second anchoring layer, thereby affixing at least a portion of the nanostructures within the second anchoring layer, whereby the growth substrate may be removed, leaving at least a portion of the nanostructures affixed within the substrate.

6. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 5 , further comprising an act of removing the growth substrate to leave a set of nanostructures, where at least a portion of the nanostructures is affixed within the substrate.

7. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 5 , wherein in the act of applying a second fluid layer, the second fluid layer is of a different material than the first fluid layer.

8. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 1 , where the nanostructures are carbon nanotubes.

9. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 1 , where the nanostructures are arranged in a pattern on the growth substrate.

10. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 1 , where the act of providing the first fluid layer on the anchoring substrate is accomplished by spin-coating the fluid layer onto the anchoring layer to provide a substantially uniform thickness.

11. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 1 , wherein the plurality of nanostructures are comprised of different materials.

12. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 1 , where the first fluid layer comprises multiple fluid layers.

13. A method for fastening a plurality of nanoscale structures within an anchoring layer as set forth in claim 1 , wherein the acts of claim 1 are performed such that a portion of the first fluid layer is nanostructure-free, the method further comprising acts of:

an act of applying a second fluid layer of specified thickness on a portion of the first fluid layer that is nanostructure-free;

providing a second plurality of nanostructures on a growth substrate, the nanostructures, each having a defined height and orientation with respect to the growth substrate; and

introducing the second plurality of nanostructures to a desired depth in the second fluid layer, such that the orientation of the nanostructures relative to the growth substrate is substantially maintained.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2007
From: GHARIB, MORTEZA; SANSOM, ELIJAH; RINDERKNECHT, DEREK
To: CALIFORNIA INSTITUTE OF TECHNOLOGY
Reel/Frame 019734/0334 →
Continuity (2)
Provisional Application 60819872 · Jul 10, 2006
Related Publication 20080145616A1 · Jun 19, 2008