Laser diode array, method of manufacturing same, printer, and optical communication device
A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.
1. A method of manufacturing a laser diode array comprising:
forming sequentially, by crystal growth from a first substrate side, a peel layer and a vertical resonator structure, the peel layer including an oxidizable material,
etching selectively the peel layer and the vertical resonator structure, forming a columnar shape;
oxidizing the peel layer and from a side face of the columnar shape,
peeling the vertical resonator structure from the first substrate; and
jointing the vertical resonator structure obtained by the peeling step to a surface of a metal layer of a second substrate,
wherein the vertical resonator structure has a layer to be oxidized containing a material having the fastest oxidation rate in the vertical resonator structure, and
wherein in the oxidizing step, a side face of the layer to be oxidized is coated with a protective film and the side face of the peel layer is not coated with the protective film, allowing the peel layer to be oxidized from the side face.
2. The method of manufacturing a laser diode array according to claim 1 ,
wherein the vertical resonator structure includes sequentially from the first substrate side: a first contact layer in contact with the peel layer, a first DBR layer, a first spacer layer, an active layer, a second spacer layer, a second DBR layer, and a second contact layer.
3. The method of manufacturing a laser diode array according to claim 2 , wherein in the peeling step, the vertical resonator structure is peeled from the first substrate at an interface between the oxidized peel layer and the first contact layer.
4. The method of manufacturing a laser diode array according to claim 1 , wherein the peel layer is made of AlAs.
5. The method of manufacturing a laser diode array according to claim 4 ,
wherein the vertical resonator structure has a layer to be oxidized, and
wherein the layer to be oxidized is made of AlAs.
6. The method of manufacturing a laser diode array according to claim 5 ,
wherein the peel layer is made of AlAs, and
the layer to be oxidized is made of Al x Ga l-x As (0.98≦×<1).
7. The method of manufacturing a laser diode array according to claim 1 ,
wherein the vertical resonator structure has a layer to be oxidized, and
wherein the layer to be oxidized is made of AlAs.
8. The method of manufacturing a laser diode array according to claim 1 , wherein in the second substrate, a connection part that penetrates a portion of the second substrate other than the metal layer of the second substrate is formed in contact with the metal layer of the second substrate.
9. The method of manufacturing a laser diode array according to claim 1 , further comprising:
heating the peel layer and the vertical resonator structure, before the peeling step, to a range of about 300° C. to about 400° C.
10. A method of manufacturing a laser diode array comprising:
forming sequentially, by crystal growth from a first substrate side, a peel layer and a vertical resonator structure, the peel layer including an oxidizable material,
etching selectively the peel layer and the vertical resonator structure, forming a columnar shape;
oxidizing the peel layer and from a side face of the columnar shape,
peeling the vertical resonator structure from the first substrate; and
jointing the vertical resonator structure obtained by the peeling step to a surface of a metal layer of a second substrate,
wherein the vertical resonator structure has a layer to be oxidized containing a material having the fastest oxidation rate in the vertical resonator structure,
wherein a thickness of the peel layer is larger than a thickness of the layer to be oxidized, and
wherein, in the oxidizing step, the peel layer and the layer to be oxidized are concurrently oxidized from the side face.
11. A method of manufacturing a laser diode array comprising:
forming sequentially, by crystal growth from a first substrate side, a peel layer and a vertical resonator structure, the peel layer including an oxidizable material,
etching selectively the peel layer and the vertical resonator structure, forming a columnar shape;
oxidizing the peel layer and from a side face of the columnar shape,
peeling the vertical resonator structure from the first substrate; and
jointing the vertical resonator structure obtained by the peeling step to a surface of a metal layer of a second substrate,
wherein the vertical resonator structure has a layer to be oxidized containing a material having the fastest oxidation rate in the vertical resonator structure,
wherein the peel layer contains a material more oxidizable than a material of the layer to be oxidized, and
wherein, in the oxidizing step, the peel layer and the layer to be oxidized are concurrently oxidized from the side face.
12. A method of manufacturing a laser diode array comprising:
forming sequentially, by crystal growth from a first substrate side, a peel layer and a vertical resonator structure, the peel layer including an oxidizable material,
etching selectively the peel layer and the vertical resonator structure, forming a columnar shape;
oxidizing the peel layer and from a side face of the columnar shape,
peeling the vertical resonator structure from the first substrate; and
jointing the vertical resonator structure obtained by the peeling step to a surface of a metal layer of a second substrate,
wherein the vertical resonator structure has a layer to be oxidized containing a material having the fastest oxidation rate in the vertical resonator structure, and
wherein a thickness of the peel layer is larger than a thickness of the layer to be oxidized and contains a material more oxidizable than a material of the layer to be oxidized, and
wherein, in the oxidizing step, the peel layer and the layer to be oxidized are concurrently oxidized from the side face.