Method of forming high-dielectric constant films for semiconductor devices

1. A method for forming a high-dielectric constant (high-k) film for a semiconductor device, the method comprising:

disposing a substrate in a process chamber;

providing a film deposition sequence of a first reactant containing a metal-carbon precursor and a second reactant containing ozone in temporally separated and alternating reactant pulses, the sequence comprising:

selecting a first reactant pulse, wherein self-saturation of the metal-carbon precursor on a surface of the substrate is achieved, and

selecting a second reactant pulse comprising ozone, wherein below self-saturation of ozone reacting with the self-saturated metal-carbon precursor on the surface of the substrate is achieved; and

exposing the substrate to the sequence of the reactant pulses with the selected temporal separations and exposures to deposit a conformal metal-carbon-oxygen high-k film on the substrate, wherein the conformal metal-carbon-oxygen high-k film contains metal atoms and carbon atoms from the metal-carbon precursor and oxygen from the ozone exposure, wherein the conformal metal-carbon-oxygen high-k film has 4-6 atomic percent carbon.

2. The method of claim 1 , further comprising:

forming a gate electrode film on the conformal metal-carbon-oxygen high-k film; and

patterning the gate electrode film and the metal-carbon-oxygen high-k film.

3. The method of claim 1 , wherein the first reactant comprises a hafnium precursor, a zirconium precursor, a titanium precursor, a rare-earth precursor, or an alkaline earth precursor, or a combination thereof.

4. The method of claim 1 , wherein the first reactant comprises a hafnium amide precursor, a zirconium amide precursor, or a titanium amide precursor, or a combination thereof.

5. The method of claim 4 , wherein the first reactant comprises Hf(NEt 2 ) 4 (tetrakis(diethylamido)hafnium, TDEAH), Hf(NEtMe) 4 (tetrakis(ethylmethylamido)hafnium, TEMAH), Hf(NMe 2 ) 4 (tetrakis(dimethylamido)hafnium, TDMAH), Zr(NEt 2 ) 4 (tetrakis(diethylamido)zirconium, TDEAZ), Zr(NMeEt) 4 (tetrakis(ethylmethylamido)zirconium, TEMAZ), Zr(NMe 2 ) 4 (tetrakis(dimethylamido)zirconium, TDMAZ), Ti(NEt 2 ) 4 (tetrakis(diethylamido)titanium, TDEAT), Ti(NMeEt) 4 (tetrakis(ethylmethylamido)titanium, TEMAT), and Ti(NMe 2 ) 4 (tetrakis(dimethylamido)titanium, TDMAT), or a combination of two or more thereof.

6. The method of claim 1 , wherein selecting the second reactant exposure comprises:

depositing a plurality of metal-carbon-oxygen high-k films using different second reactant exposures;

measuring thicknesses of the plurality of metal-carbon-oxygen high-k films;

constructing a graph of the thicknesses of the plurality of metal-carbon-oxygen high-k films as a function of the different second reactant exposures; and

determining the self-saturation of ozone from the graph.

7. The method of claim 1 , wherein the substrate is maintained at a temperature suitable for atomic layer deposition (ALD) of the conformal metal-carbon-oxygen high-k film.

8. The method of claim 1 , wherein the substrate is maintained at a temperature below which is suitable for atomic layer deposition (ALD) of the conformal metal-carbon-oxygen high-k film.

9. A method for forming a high-dielectric constant (high-k) film for a semiconductor device, the method comprising:

disposing a substrate in a process chamber;

providing a film deposition sequence of a first reactant containing a metal-carbon precursor and a second reactant containing ozone in temporally separated and alternating reactant pulses, the providing comprising:

selecting a first reactant exposure that achieves self-saturation of the metal-carbon precursor on a surface of the substrate, and

selecting a second reactant exposure comprising ozone that is below self-saturation of ozone reacting with the self-saturated metal-carbon precursor on the surface of the substrate;

exposing the substrate to the sequence of the reactant pulses with the selected temporal separations and exposures to deposit a conformal metal-carbon-oxygen high-k film on the substrate, wherein the conformal metal-carbon-oxygen high-k film contains metal atoms and carbon atoms from the metal-carbon precursor and oxygen from the ozone exposure, wherein the conformal metal-carbon-oxygen high-k film has 4-6 atomic percent carbon; and

exposing the conformal metal-carbon-oxygen high-k film to a flow of O 2 gas excited by ultra-violet radiation to reduce a carbon-content of the conformal metal-carbon-oxygen high-k film.

10. The method of claim 9 , wherein the substrate is maintained at a temperature suitable for atomic layer deposition (ALD) of the conformal metal-carbon-oxygen high-k film.

11. The method of claim 9 , wherein the substrate is maintained at a temperature below which is suitable for atomic layer deposition (ALD) of the conformal metal-carbon-oxygen high-k film.

12. The method of claim 9 , wherein the exposing the conformal metal-carbon-oxygen high-k film further comprises exposing the conformal metal-carbon-oxygen high-k film to plasma excited oxidation species from a remote plasma source.

13. A method for forming a high-dielectric constant (high-k) film for a semiconductor device, the method comprising:

disposing a substrate in a process chamber;

providing a film deposition sequence of a first reactant containing a metal-carbon precursor and a second reactant containing ozone in temporally separated and alternating reactant pulses, the providing comprising:

selecting a first reactant exposure that achieves self-saturation of the metal-carbon precursor on a surface of the substrate, and

selecting a second reactant exposure comprising ozone that is below self-saturation of ozone reacting with the self-saturated metal-carbon precursor on the surface of the substrate;

exposing the substrate to the sequence of the reactant pulses with the selected temporal separations and exposures to deposit a conformal metal-carbon-oxygen high-k film on the substrate, wherein the conformal metal-carbon-oxygen high-k film contains metal atoms and carbon atoms from the metal-carbon precursor and oxygen from the ozone exposure, wherein the conformal metal-carbon-oxygen high-k film has 4-6 atomic percent carbon; and

exposing the conformal metal-carbon-oxygen high-k film to a process gas containing O 2 gas excited by plasma induced dissociation based on microwave irradiation via a plane antenna member having a plurality of slots to reduce a carbon-content of the conformal metal-carbon-oxygen high-k film.

14. The method of claim 13 , wherein the substrate is maintained at a temperature suitable for atomic layer deposition (ALD) of the conformal metal-carbon-oxygen high-k film.

15. The method of claim 13 , wherein the substrate is maintained at a temperature below which is suitable for atomic layer deposition (ALD) of the conformal metal-carbon-oxygen high-k film.

16. The method of claim 9 , wherein exposing the conformal metal-carbon-oxygen high-k film to a flow of O 2 gas excited by ultra-violet radiation reduces the carbon-content of the conformal metal-carbon-oxygen high-k film to 2-3 atomic percent carbon.

17. The method of claim 13 , wherein exposing the conformal metal-carbon-oxygen high-k film to a flow of O 2 gas excited by plasma induced dissociation based on microwave irradiation via a plane antenna member having a plurality of slots reduces the carbon-content of the conformal metal-carbon-oxygen high-k film to 2-3 atomic percent carbon.