IP Library Granted Patent US 7,968,205
Granted Patent B2
US 7,968,205 · App. 11/550,929 · Granted Jun 28, 2011

Corrosion resistant multilayer member

Assignee: Shin-Etsu Chemical Co., Ltd.
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Quick Facts
Patent No.
US 7,968,205
App. No.
11/550,929
Granted
Jun 28, 2011
Kind
B2
Abstract

A corrosion resistant member to be exposed to a halogen-containing gas atmosphere or a halogen-containing gas plasma atmosphere, comprising a substrate and a plurality of layers deposited thereon including a layer of rare earth fluoride providing the outermost surface and a layer of rare earth oxide having a porosity of less than 5% underlying the rare earth fluoride layer.

Claims (12)

1. A corrosion resistant member to be exposed to a halogen-containing gas atmosphere or a halogen-containing gas plasma atmosphere, comprising a substrate and a plurality of layers deposited thereon including a layer of rare earth fluoride providing the outermost surface and a layer of rare earth oxide having a porosity of less than 5% underlying the rare earth fluoride layer,

said rare earth fluoride layer being a thermally sprayed coating and having a thickness of 10 to 1,000 μm, and

said rare earth oxide layer being a thermally sprayed coating and having a thickness of 20 to 500 μm.

2. The corrosion resistant member of claim 1 wherein for each layer, the rare earth is a single element selected from the group consisting of Y, Sc, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

3. The corrosion resistant member of claim 1 wherein for each layer, the rare earth is a mixture of at least two elements selected from the group consisting of Y, Sc, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

4. The corrosion resistant member of claim 1 which consists essentially of the substrate, the rare earth oxide layer thereon, and the rare earth fluoride layer on the oxide layer.

5. The corrosion resistant member of claim 1 which is used in a semiconductor or flat panel display manufacturing apparatus.

6. The corrosion resistant member of claim 1 wherein the substrate is selected from among metals, metal alloys, and ceramics.

7. The corrosion resistant member of claim 6 wherein the substrate is selected from among Al, Mo, Ta, W, Hf, V, Zr, Nb, Ti, stainless steel, quartz, silicon nitride, alumina, and zirconia.

8. The corrosion resistant member of claim 1 wherein a metal or ceramic layer is formed on the substrate at a thickness of 10 to 500 μm.

9. The corrosion resistant member of claim 1 wherein a metal or ceramic layer is formed between the rare earth oxide layer and the rare earth fluoride layer at a thickness of 10 to 500 μm.

10. The corrosion resistant member of claim 1 wherein the plurality of layers have a multilayer structure including more than one set of rare earth oxide layer/rare earth fluoride layer, by forming a first rare earth oxide layer on the substrate, forming a first rare earth fluoride layer on the first oxide layer, forming a second rare earth oxide layer on the first fluoride layer, subsequently forming a second rare earth fluoride layer so that the outer most layer is a rare earth fluoride layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2006
From: NAKANO, HAJIME; TSUKATANI, TOSHIHIKO; MAEDA, TAKAO
To: SHIN-ETSU CHEMICAL CO., LTD.
Reel/Frame 018415/0505 →
Priority Claims (1)
JP 2005-307199 · Oct 21, 2005 · national
Continuity (1)
Related Publication 20070111030A1 · May 17, 2007