Method of manufacturing semiconductor device
View Patent ↗An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
1. A method of manufacturing a semiconductor device, comprising the steps of:
forming a metal film over a substrate;
forming a metal oxide film over the metal film;
forming a nonmetal inorganic film over the metal oxide film;
forming an organic compound film over the nonmetal inorganic film;
forming a thin film transistor comprising a gate electrode, a gate insulating film and a semiconductor film over the organic compound film;
forming an interlayer insulating film over the thin film transistor; and
separating the thin film transistor from the substrate.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the metal oxide film comprises an oxide of a same metal as a metal of the metal film.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the organic compound film is formed at a thickness of 5 μm or more.
4. A method of manufacturing a semiconductor device, comprising the steps of:
forming a molybdenum film over a substrate;
forming a molybdenum oxide film over the molybdenum film;
forming a nonmetal inorganic film over the molybdenum oxide film;
forming an organic compound film over the nonmetal inorganic film;
forming a thin film transistor comprising a gate electrode, a gate insulting film and an amorphous semiconductor film over the organic compound film;
forming an interlayer insulating film over the thin film transistor; and
separating a stacked-layer body including the nonmetal inorganic film, the organic compound film, and the thin film transistor from the substrate.
5. The method of manufacturing a semiconductor device according to claim 4 , wherein the organic compound film is formed by heating at a temperature greater than or equal to 180° C. and less than 500° C.
6. The method of manufacturing a semiconductor device according to claim 4 , further comprising the step of performing partial irradiation with a laser beam before separating the stacked-layer body from the substrate.
7. The method of manufacturing a semiconductor device according to claim 4 , wherein the substrate is selected from the group consisting of a glass substrate, a ceramic substrate, and a quartz substrate.
8. The method of manufacturing a semiconductor device according to claim 4 , wherein the molybdenum oxide film is formed in contact with the molybdenum film.
9. The method of manufacturing a semiconductor device according to claim 4 , wherein the organic compound film is formed at a thickness of 5 μM or more.
10. A method of manufacturing a semiconductor device, comprising the steps of:
forming a molybdenum film over a substrate;
forming a molybdenum oxide film over the molybdenum film;
forming a nonmetal inorganic film over the molybdenum oxide film;
forming an organic compound film over the nonmetal inorganic film;
forming a thin film transistor comprising a gate electrode, a gate insulating film and a semiconductor film that contains an organic compound over the organic compound film;
forming an interlayer insulating film over the thin film transistor; and
separating a stacked-layer body including the nonmetal inorganic film, the organic compound film, and the thin film transistor from the substrate.
11. The method of manufacturing a semiconductor device according to claim 10 , wherein the organic compound film is formed by heating at a temperature greater than or equal to 180° C. and less than 500° C.
12. The method of manufacturing a semiconductor device according to claim 10 , further comprising the step of performing partial irradiation with a laser beam before separating the stacked-layer body from the substrate.
13. The method of manufacturing a semiconductor device according to claim 10 , wherein the substrate is selected from the group consisting of a glass substrate, a ceramic substrate, and a quartz substrate.
14. The method of manufacturing a semiconductor device according to claim 10 , wherein the molybdenum oxide film is formed in contact with the molybdenum film.
15. The method of manufacturing a semiconductor device according to claim 10 , wherein the organic compound film is formed at a thickness of 5 μm or more.
16. A method of manufacturing a semiconductor device, comprising the steps of:
forming a molybdenum film over a substrate;
forming a molybdenum oxide film over the molybdenum film;
forming a nonmetal inorganic film over the molybdenum oxide film;
forming an organic compound film over the nonmetal inorganic film;
forming a thin film transistor comprising a gate electrode, a gate insulating film and a semiconductor film over the organic compound film;
forming an interlayer insulating film over the thin film transistor;
forming a first electrode over the interlayer insulating film;
forming a light-emitting layer over the first electrode;
forming a second electrode over the light-emitting layer;
affixing a flexible substrate over the second electrode; and
separating a stacked-layer body including the nonmetal inorganic film, the organic compound film, the thin film transistor, the interlayer insulating film, the first electrode, the light-emitting layer, the second electrode, and the flexible substrate from the substrate.
17. The method of manufacturing a semiconductor device according to claim 16 , wherein the organic compound film is formed by heating at a temperature greater than or equal to 180° C. and less than 500° C.
18. The method of manufacturing a semiconductor device according to claim 16 , further comprising the step of performing partial irradiation with a laser beam before separating the stacked-layer body from the substrate.
19. The method of manufacturing a semiconductor device according to claim 16 , wherein the substrate is selected from the group consisting of a glass substrate, a ceramic substrate, and a quartz substrate.
20. The method of manufacturing a semiconductor device according to claim 16 , wherein the organic compound film is formed at a thickness of 5 μm or more.
21. The method of manufacturing a semiconductor device according to claim 16 , wherein the molybdenum oxide film is formed in contact with the molybdenum film.
22. A method of manufacturing a semiconductor device, comprising the steps of:
forming a metal film over a substrate;
forming a metal oxide film over the metal film;
forming a nonmetal inorganic film in contact with the metal oxide film;
forming an organic compound film in contact with the nonmetal inorganic film;
forming a thin film transistor comprising a gate electrode, a gate insulating film and a semiconductor film over the organic compound film;
forming an interlayer insulating film over the thin film transistor; and
separating the thin film transistor from the substrate.
23. The method of manufacturing a semiconductor device according to claim 22 , wherein the metal oxide film comprises an oxide of a same metal as a metal of the metal film.
24. The method of manufacturing a semiconductor device according to claim 22 , wherein the organic compound film is formed by heating at a temperature greater than or equal to 180° C. and less than 500° C.
25. The method of manufacturing a semiconductor device according to claim 22 , further comprising the step of performing partial irradiation with a laser beam before separating the thin film transistor from the substrate.
26. The method of manufacturing a semiconductor device according to claim 22 , wherein the substrate is selected from the group consisting of a glass substrate, a ceramic substrate, and a quartz substrate.
27. The method of manufacturing a semiconductor device according to claim 22 , wherein the metal film is a molybdenum film.
28. The method of manufacturing a semiconductor device according to claim 22 , wherein the organic compound film is formed at a thickness of 5 μm or more.