IP Library Granted Patent US 8,003,441
Granted Patent B2
US 8,003,441 · App. 12/670,127 · Granted Aug 23, 2011

Manufacturing method of semiconductor device

Assignee: LINTEC Corporation
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Quick Facts
Patent No.
US 8,003,441
App. No.
12/670,127
Granted
Aug 23, 2011
Kind
B2
Abstract

A manufacturing method of a semiconductor device according to the present invention comprises: laminating a surface protective sheet to a circuit surface side of a wafer formed with grooves which divide each circuit wherein an adhesive film is adhered on the circuit surface of the wafer; reducing the thickness of the wafer and finally dividing the wafer into individual chips by grinding a back face of the wafer; picking up individual chips together with the adhesive film; die-bonding said individual chip to predetermined position of a chip mounting substrate via said adhesive film; fixing the chip to the chip mounting substrate by heating the die-bonded chip having the adhesive film; and applying a static pressure larger than an ambient pressure by 0.05 MPa or more to a stacked body including the adhesive film one or more times, at any point between adhering the wafer to the adhesive film and fixing the chip to the chip mounting substrate.

Claims (9)

1. A manufacturing method of a semiconductor device comprising:

laminating a surface protective sheet to a circuit surface side of a wafer formed with grooves which divide each circuit wherein an adhesive film is adhered on the circuit surface of the wafer;

reducing the thickness of the wafer and finally dividing the wafer into individual chips by grinding a back face of the wafer;

picking up individual chips together with the adhesive film;

die-bonding said individual chip to predetermined position of a chip mounting substrate via said adhesive film;

fixing the chip to the chip mounting substrate by heating the die-bonded chip having the adhesive film; and

applying a static pressure larger than an ambient pressure by 0.05 MPa or more to a stacked body including the adhesive film one or more times, at any point between adhering the wafer to the adhesive film and fixing the chip to the chip mounting substrate.

2. The manufacturing method of a semiconductor device as set forth in claim 1 wherein the static pressure is applied after the die-bonding.

3. The manufacturing method of a semiconductor device as set forth in claim 1 wherein the chip is fixed to the chip mounting substrate while applying the static pressure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2010
From: MAEDA, JUN; TANAKA, KEIKO; YAMAZAKI, OSAMU
To: LINTEC CORPORATION
Reel/Frame 023830/0112 →
Priority Claims (1)
JP 2007-190372 · Jul 23, 2007 · national
Continuity (1)
Related Publication 20100190293A1 · Jul 29, 2010