IP Library Granted Patent US 8,008,973
Granted Patent B2
US 8,008,973 · App. 12/719,253 · Granted Aug 30, 2011

Amplifier for amplifying a high-frequency signal

Assignee: Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 8,008,973
App. No.
12/719,253
Granted
Aug 30, 2011
Kind
B2
Abstract

A transistor is provided to amplify a high frequency signal. A gate/base of the transistor receives the high frequency input signal. A variable capacitor is connected between the gate and a source/between the base and an emitter of the transistor. A variable inductor is connected with the source/the emitter of the transistor.

Claims (27)

1. An amplifier comprising:

a transistor to amplify a high frequency signal, a gate/base of the transistor receiving the high frequency input signal;

a variable capacitor connected between the gate and a source/between the base and an emitter of the transistor; and

a variable inductor connected with the source/the emitter of the transistor.

2. An amplifier according to claim 1 , wherein the values of the variable capacitor and the variable inductor are set so as to obtain impedance matching at a selected frequency.

3. An amplifier according to claim 1 , further comprising an inductor connected with the gate/base of the transistor.

4. An amplifier according to claim 1 , further comprising a capacitor connected with a drain/collector of the transistor.

5. An amplifier having a high frequency signal input terminal and a high frequency signal output terminal, comprising:

a plurality of transistors to amplify a high frequency signal, gates/bases of the transistors being connected with the high frequency signal input terminal, drains/collectors of the transistors being connected with the high frequency signal output terminal;

a plurality of variable capacitors connected between the gates and sources/between the bases and emitters of the transistors respectively;

a plurality inductors connected with the sources/the emitters of the transistors and mutually coupled with each other electromagnetically; and

an On/OFF control circuit to control the potentials of the gates/the bases of the transistors respectively, the On/OFF control circuit turns on/off the transistors selectively.

6. An amplifier according to claim 5 , wherein the On/OFF control circuit performs On/OFF control so as to obtain impedance matching at a selected frequency.

7. An amplifier according to claim 5 , wherein

the sources/the emitters of a plurality of the transistors are connected with one of the inductors commonly, and the On/OFF control circuit change the number of the transistors to be turned on so as to control current flowing through the one of the inductors.

8. An amplifier according to claim 5 , further comprising a capacitor connected between the gate/base of the transistor and the high frequency signal input terminal.

9. An amplifier according to claim 5 , further comprising a capacitor connected with the drains/collectors of the transistors.

10. An amplifier according to claim 5 , further comprising an inductor connected with the high frequency signal input terminal.

11. An amplifier having a high frequency signal input terminal and a high frequency signal output terminal, comprising:

a plurality of transistors to amplify a high frequency signal, gates/bases of the transistors being connected with the high frequency signal input terminal, drains/collectors of the transistors being connected with the high frequency signal output terminal;

a plurality of variable capacitors connected between the gates and sources/between the bases and emitters of the transistors respectively;

a plurality inductors connected with the sources/the emitters of the transistors and mutually coupled with each other electromagnetically; and

a bias control circuit to control the bias potentials of the gates/the bases of the transistors respectively, the bias control circuit regulate currents flowing through the transistors respectively.

12. An amplifier according to claim 11 , wherein the bias control circuit controls currents flowing through the inductors so as to obtain impedance matching at a selected frequency.

13. An amplifier according to claim 11 , further comprising capacitors connected between the gates/bases of the transistors and the high frequency signal input terminal.

14. An amplifier according to claim 11 , further comprising a capacitor connected with the drains/collectors of the transistors.

15. An amplifier according to claim 11 , further comprising an inductor connected with the high frequency signal input terminal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 8, 2010
From: FUJIMOTO, RYUICHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 024043/0416 →
Priority Claims (1)
JP 2009-217599 · Sep 18, 2009 · national
Continuity (1)
Related Publication 20110068871A1 · Mar 24, 2011