Nitride semiconductor and method for manufacturing thereof
A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.
1. A nitride semiconductor, comprising:
a P-type nitride layer formed on an active layer,
wherein the P-type nitride layer comprises a group 4 element,
wherein the group 4 element is not substantially combined with hydrogen (H),
wherein the group 4 element is an element selected from the group consisting of silicon (Si), carbon (C), and germanium (Ge), and
wherein the group 4 element is at least partially doped at one or more nitrogen vacancies of the P-type nitride layer.
2. The nitride semiconductor according to claim 1 , further comprising:
a substrate; and
a nitride layer that is not doped with dopant and that is formed on the substrate,
wherein the P-type nitride layer is formed on the nitride layer.
3. The nitride semiconductor according to claim 1 , wherein the group 4 element functions as an acceptor.
4. The nitride semiconductor according to claim 1 , further comprising:
a nitrogen lattice layer having a plurality of vacancies.
5. The nitride semiconductor according to claim 4 , wherein the group of 4 element fills at least one vacancy of the nitrogen lattice layer.
6. A nitride semiconductor, comprising:
a buffer layer formed on a substrate;
an under layer formed on the buffer layer;
an active layer formed on the under layer for emitting light;
a P-type nitride layer comprising a group 4 element on the active layer,
wherein the group 4 element is not substantially combined with hydrogen (H),
wherein the group 4 element is an element selected from the group consisting of silicon (Si), carbon (C), and germanium (Ge), and
wherein the group 4 element is at least partially doped at one or more nitrogen vacancies of the P-type nitride layer.
7. The nitride semiconductor according to claim 6 , further comprising:
an insulating layer arranged to expose a predetermined portion of the P-type nitride layer and a predetermined portion of the under layer;
a P-electrode in contact with the exposed P-type nitride layer and formed at a predetermined portion of the insulating layer; and
an N-electrode in contact with the exposed under layer and formed at a predetermined portion of the insulating layer.
8. The nitride semiconductor according to claim 6 , wherein the group 4 element functions as an acceptor.
9. The nitride semiconductor according to claim 6 , further comprising:
a nitrogen lattice layer having a plurality of vacancies.
10. The nitride semiconductor according to claim 9 , wherein the group of 4 element fills at least one vacancy of the nitrogen lattice layer.
11. A nitride semiconductor, comprising:
a conductive substrate;
a N-type semiconductor layer on the conductive substrate;
an active layer on the N type semiconductor layer; and
a P-type semiconductor layer on the active layer,
wherein the P-type semiconductor layer comprises at least one group 4 element,
wherein the group 4 element is not substantially combined with hydrogen (H),
wherein the group 4 element is an element selected from the group consisting of silicon (Si), carbon (C), and germanium (Ge), and
wherein the group 4 element is at least partially doped at one or more nitrogen vacancies of the P-type semiconductor layer.
12. The nitride semiconductor according to claim 11 , wherein the P-type semiconductor layer is a P-type nitride layer.