Method for manufacturing light emitting device using non-polar substrate
A method for manufacturing a light emitting device includes preparing a substrate where a crystal growth surface has an a-plane or an m-plane; forming a buffer layer on the substrate; forming a semiconductor layer on the buffer layer; and separating the semiconductor layer from the substrate by removing the buffer layer.
1. A method for manufacturing a light emitting device, the method comprising:
preparing a substrate where a crystal growth surface has an a-plane or an m-plane, wherein the substrate comprises at least one pattern;
forming a buffer layer on the substrate;
forming a semiconductor layer on the buffer layer;
separating the semiconductor layer by a unit device separation region, wherein the unit device separation region partially corresponds to at least the pattern on the substrate; and
separating the semiconductor layer from the substrate by removing the buffer layer.
2. The method according to claim 1 , wherein the substrate comprises a non-polar substrate.
3. The method according to claim 1 , before the separating of the semiconductor layer, comprising:
forming a first electrode layer on the semiconductor layer and forming a supporting substrate on the first electrode layer; and
forming a second electrode layer on the semiconductor layer exposed by the removing of the buffer layer.
4. The method according to claim 1 , wherein the buffer layer comprises one of a metal, a metal nitride, a metal carbide, and a metal oxide.
5. The method according to claim 1 , wherein the buffer layer comprises a groove.
6. A method for manufacturing a light emitting device, the method comprising:
preparing a substrate;
forming a pattern on the substrate;
forming a semiconductor layer on the substrate having the pattern;
separating the semiconductor layer by a unit device separation region, wherein the unit device separation region partially corresponds to at least the pattern on the substrate; and
separating the semiconductor layer from the substrate by using the pattern as a basis.
7. The method according to claim 6 , wherein a plane of the pattern comprises one of a parallel stripe pattern, a pattern having a plurality of rectangular grooves, and a circular pattern.
8. The method according to claim 6 , comprising forming a first buffer layer on the substrate having the pattern.
9. The method according to claim 8 , comprising forming a second buffer layer on the first buffer layer.
10. The method according to claim 6 , comprising:
forming a first electrode on the semiconductor layer divided into the unit; device separation region;
forming a supporting substrate on the first electrode;
removing the substrate; and
forming a second electrode on the semiconductor layer exposed by the removing of the substrate.
11. The method according to claim 6 , after separating the semiconductor layer by the unit device separation region, comprising forming a passivation layer on at least a portion of the semiconductor layer.
12. A method for manufacturing a light emitting device, the method comprising:
preparing a substrate;
forming a first buffer layer on the substrate;
forming a pattern on the substrate having the first buffer layer;
forming a semiconductor layer on the substrate having the pattern;
separating the semiconductor layer by a unit device separation region, wherein the unit device separation region corresponds to at least the pattern on the substrate; and
separating the semiconductor layer from the substrate by using the pattern as a basis.
13. The method according to claim 12 , comprising:
forming a second buffer layer on the first buffer layer; and
forming the semiconductor layer on the second buffer layer.