IP Library Granted Patent US 8,019,921
Granted Patent B2
US 8,019,921 · App. 12/271,213 · Granted Sep 13, 2011

Intelligent memory buffer

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Quick Facts
Patent No.
US 8,019,921
App. No.
12/271,213
Granted
Sep 13, 2011
Kind
B2
Abstract

A technique reduces cost, complexity and/or power consumption of a memory system by including intelligence in a memory buffer circuit of the memory system. An apparatus includes a memory buffer circuit configured to selectively operate in one of a plurality of modes. In a first mode, the memory buffer circuit is configured to interface to a first type of memory device, is configured to enable an input circuit of the memory buffer circuit, and is configured to drive on a terminal of a memory interface of the memory buffer circuit a version of a signal received by the input circuit during a memory operation. In a second mode, the memory buffer circuit is configured to interface to the first type of memory device, is configured to disable the input circuit, and is configured to drive a signal on the terminal during the memory operation.

Claims (15)

1. An apparatus comprising:

a memory controller circuit configured to communicate a command to a memory module including a memory buffer and a memory device, the command indicating one of a plurality of modes of operation,

wherein in a first mode of the plurality of modes of operation, a first signal is communicated between the memory controller circuit and the memory buffer circuit during a memory operation, and in a second mode of the plurality of modes of operation, the first signal is not communicated between the memory controller circuit and the memory buffer circuit during the memory operation,

wherein when the memory device has a 4-bit data width, when the memory operation is a write operation, in the first mode, the memory controller circuit is configured to transmit to the memory buffer circuit one data strobe signal per four bits of data, and in the second mode, the memory controller circuit is configured to transmit to the memory buffer circuit one data strobe signal per eight bits of data, and

wherein when the memory device has a 4-bit data width, when the memory operation is a read operation, in the first mode, the memory controller circuit is configured to receive from the memory buffer circuit one data strobe signal per four bits of data, and in the second mode, the memory controller circuit is configured to receive from the memory buffer circuit one data strobe signal per eight bits of data.

2. The apparatus, as recited in claim 1 , further comprising:

the memory buffer circuit, wherein in the first mode, the memory buffer circuit is configured to enable an input circuit of the memory buffer circuit, and is configured to drive on a terminal of a memory interface of the memory buffer circuit a version of a signal received by the input circuit during a memory operation, and

wherein in the second mode, the memory buffer circuit is configured to disable the input circuit, and is configured to drive a signal on the terminal during the memory operation.

3. The apparatus, as recited in claim 1 ,

wherein when the memory operation is a write operation to the memory device, the memory device has a data width of at least eight bits, and the first signal is a data mask signal,

in the first mode, the memory controller circuit is configured to provide the data mask signal to the memory buffer circuit, and in the second mode, the memory buffer circuit is configured to generate the data mask signal.

4. The apparatus, as recited in claim 3 ,

wherein the plurality of modes includes a third mode in which the memory buffer circuit is configured to disable a data mask input circuit and is configured to effectively disable a data mask input terminal during the memory operation when the memory operation is a write operation to the memory device, the memory device has a data width of four bits, and the first signal is a data mask signal.

5. The apparatus, as recited in claim 1 ,

wherein the memory module is a dual in-line memory module compliant with a JEDEC Double Data Rate Three standard and the memory controller circuit includes one data strobe terminal per eight data terminals and no data mask terminals.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded May 12, 2021
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 056987/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 20, 2020
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES INC.
Reel/Frame 054636/0001 →
SECURITY AGREEMENT Recorded Nov 29, 2018
From: GLOBALFOUNDRIES INC.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION
Reel/Frame 049490/0001 →