Light emitting diode, production method thereof and lamp

1. A light emitting diode comprising:

a substrate;

a compound semiconductor layer comprising a light emitting layer formed on the substrate;

a first electrode formed on an upper surface of the compound semiconductor layer: and

a second electrode formed on the substrate or a semiconductor layer which is exposed by removing at least a portion of the compound semiconductor layer;

wherein the first electrode comprises

a wiring electrode provided on the compound semiconductor layer in contact therewith;

an ohmic electrode provided on the compound semiconductor layer in contact therewith;

a translucent electrode formed over the compound semiconductor layer to cover the wiring electrode and the ohmic electrode; and

a bonding pad electrode connected to the wiring electrode, at least a portion of the bonding pad electrode being exposed from an opening of the translucent electrode to the exterior.

2. The light emitting diode according to claim 1 , wherein the translucent electrode is made of indium tin oxide (ITO).

3. The light emitting diode according to claim 1 , wherein resistivity of the wiring electrode is 20 μΩcm or less, and resistivity of the translucent electrode is 1 mΩcm or less.

4. The light emitting diode according to claim 1 , wherein a relationship between a thickness t 1 of the wiring electrode, a thickness t 2 of the ohmic electrode, a thickness t 3 of the translucent electrode and a thickness t 4 of the bonding pad electrode is expressed in the following equation,

t 4 >t 3 >t 2 ,t 1.

5. The light emitting diode according to claim 1 , wherein a relationship between thickness t 1 of the wiring electrode, thickness t 2 of the ohmic electrode, thickness t 3 of the translucent electrode and thickness t 4 of the bonding pad electrode satisfies equations (1) to (3) below:

t 4>2 ×t 3  (1)

t 3>1.25 ×t 2  (2)

t 3>1.25 ×t 1  (3).

6. The light emitting diode according to claim 1 , wherein reflectivity of the wiring electrode and reflectivity of the bonding pad electrode are equal to or more than 90% with respect to a light emitted from the compound semiconductor layer having the light emitting layer.

7. The light emitting diode according to claim 1 , wherein the wiring electrode is provided on at least a portion of the compound semiconductor layer, and a total length of the wiring electrode is 1 mm or more.

8. The light emitting diode according to claim 1 , wherein the wiring electrode comprises an Au film or an Ag film, and the bonding pad electrode comprises a Pt film and an Au film which are sequentially stacked in a pad formation region on the wiring electrode.

9. The light emitting diode according to claim 1 , wherein at least a portion of a surface of the compound semiconductor layer is formed to be in a rough state, the translucent electrode being formed on the surface of the compound semiconductor layer.

10. The light emitting diode according to claim 1 , wherein the substrate is made of a translucent material.

11. The light emitting diode according to claim 10 , wherein the substrate is made of GaP.

12. The light emitting diode according to claim 1 , wherein the compound semiconductor layer is composed of a p-type semiconductor layer, a light emitting layer and an n-type semiconductor layer which are sequentially stacked on a main surface of the substrate.

13. The light emitting diode according to claim 12 , wherein the first electrode is an n-type electrode formed on the n-type semiconductor layer, and the second electrode is a p-type electrode formed in an exposed region on the p-type semiconductor layer or the main surface of the substrate.

14. The light emitting diode according to claim 1 , wherein the light emitting layer is made of a Group III-V compound semiconductor.

15. The light emitting diode according to claim 14 , wherein the light emitting layer is made of a GaP based compound semiconductor.

16. The light emitting diode according to claim 14 , wherein the light emitting layer is made of an AlGaInP based compound semiconductor.

17. A method of producing the light emitting diode according to claim 1 , comprising:

an epitaxial step of forming a compound semiconductor layer by stacking at least an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer in this order on a substrate for epitaxial growth;

a bonding step of bonding the compound semiconductor layer and a substrate:

a removing step of removing the substrate for epitaxial growth from the compound semiconductor layer to expose a light emitting surface and thus form a stacked semiconductor wafer;

a second electrode forming step of forming a second electrode in an exposed region by removing at least a portion of the compound semiconductor layer to expose the main surface of the substrate;

a first electrode forming step of forming a first electrode by forming a wiring electrode on the compound semiconductor layer, forming an ohmic electrode on the compound semiconductor layer, forming a bonding pad electrode in a pad formation region on the wiring electrode, exposing at least a portion of the bonding pad electrode, and forming a translucent electrode formed over the compound semiconductor layer to cover the wiring electrode and the ohmic electrode; and

a separating step of cutting the stacked semiconductor wafer into element unit chips.

18. A light emitting diode obtained by the production method according to claim 17 .

19. A lamp employing the light emitting diode according to claim 1 .