Interconnections for flip-chip using lead-free solders and having reaction barrier layers
View Patent ↗An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN.
1. An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising:
a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion and reaction barrier layer, and a solder wettable layer, said adhesion/barrier layer being for placement between a microelectronic device and said solder wettable layer, and wherein said solder wettable layer is of a metal reactive with components of a tin-containing lead-free solder, so that said solder wettable layer is consumed during soldering, wherein the adhesion/reaction barrier layer remains after being placed in contact with said lead free solder during soldering; and
one or more lead-free solder balls selectively situated on said solder wettable layer, said lead-free solder balls comprising tin as a predominant component and one or more alloying components;
wherein said adhesion/reaction barrier layer is comprised of a material selected from the group consisting of Zr, and ZrN.
2. The interconnection structure defined in claim 1 , wherein said solder wetting layer is comprised of a material selected from the group consisting of Cu, Ni, Co, Pd, Pt, Au and Sn.
3. The interconnection structure defined in claim 1 , further comprising an optional third layer comprised of Au or Sn, if the second layer is not formed of Au or Sn.
4. The interconnection structure defined in claim 1 , wherein said lead-free solder ball is comprised of a material that substantially avoids alpha particle emission.
5. The interconnection structure defined in claim 1 , wherein said alloying components are selected from the group consisting of Sn, Bi, Cu, Ag, Zn and Sb.
6. The interconnection structure defined in claim 1 , wherein said adhesion/reaction barrier layer comprises Ti and said solder wettable layer comprises one of Cu, Co, Ni, Pd and Pt.