Thin film transistor and method of manufacturing the same
View Patent ↗A thin film transistor comprising a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes is provided. The gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiN x or SiO x N y through which electrons are allowed to tunnel is provided between the active layer and the source and drain electrodes.
1. A thin film transistor, comprising:
a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes,
wherein the gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNx or SiOxNy through which electrons are allowed to tunnel between the active layer and the source electrode and between the active layer and the drain electrode, is provided between the active layer and the source electrode and between the active layer and the drain electrode, respectively.
2. The thin film transistor of claim 1 , wherein the thin film of SiNx or SiOxNy has a thickness of about 8-15 nm.
3. The thin film transistor of claim 1 , wherein a material of the source and drain electrodes comprises Al alloy.
4. The thin film transistor of claim 3 , wherein the Al alloy is selected from the group consisting of AlNd, AlTa, AlNi, AlZr, AlCu, and AlNdNi.
5. The thin film transistor of claim 1 , wherein the thin film transistor is a bottom gate thin film transistor.
6. The thin film transistor of claim 1 , wherein the active layer comprises a semiconductor layer and an ohmic contact layer that are stacked together, and the thin film of SiNx or SiOxNy through which electrons are allowed to tunnel is provided between the ohmic contact layer and the source electrode and between the ohmic contact layer and the drain electrodes, respectively.
7. The thin film transistor of claim 6 , wherein the ohmic contact layer is a doped semiconductor layer or a microcrystal silicon layer.
8. A thin film transistor liquid crystal display, comprising a thin film transistor as a switching element of a pixel unit, wherein the thin film transistor comprises:
a gate electrode, a gate insulating layer, an active layer, and source and drain electrodes, wherein the gate electrode overlaps with a channel region of the active layer, the gate insulating layer is provided between the gate electrode and the active layer, the source and drain electrodes overlap a source region and a drain region of the active layer, respectively, and a thin film of SiNx or SiOxNy through which electrons are allowed to tunnel between the active layer and the source electrode and between the active layer and the drain electrode, is provided between the active layer and the source electrode and between the active layer and drain electrode, respectively.
9. The thin film transistor liquid crystal display of claim 8 , further comprising a pixel electrode that is connected with one of the source and drain electrodes.
10. The thin film transistor liquid crystal display of claim 8 , wherein the pixel electrode is connected with one of the source and drain electrodes through a via hole.