Manufacturing method of semiconductor device
A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the side wall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
1. A manufacturing method of a semiconductor device comprising:
a step of forming a first film on a semiconductor substrate;
a step of forming a second film on the first film;
a step of forming a resist pattern on the second film;
a step of forming an opening by removing the second film utilizing the resist pattern as a mask;
a step of forming a protruding portion of the first film by removing the first film and forming a first side wall on the second film;
a step of removing a surface of the semiconductor substrate utilizing the first side wall as a mask so as to form a round part of the surface of the semiconductor substrate and forming a second side wall on the first side wall and the round part; and
a step of further removing the semiconductor substrate utilizing the second side wall as a mask.
2. The manufacturing method of the semiconductor device according to claim 1 , wherein the first film is an oxide film, and
the second film is a nitride film.
3. The manufacturing method of the semiconductor device according to claim 1 , wherein the resist pattern is formed to have a shape that depends on a trench formed in the semiconductor substrate.
4. The manufacturing method of the semiconductor device according to claim 1 , wherein the first film, the second film, and the semiconductor substrate are removed by etching treatment.
5. The manufacturing method of the semiconductor device according to claim 1 , wherein the projecting part of the first film is tapered to have a taper angle of 5° to 45° at the step of removing the first film.