Semiconductor device and method for manufacturing the same
Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate formed on a first surface thereof with a readout circuitry and a photodiode area; a metal interconnection layer formed on the first surface; a connection via metal extending from the first surface to a second surface of the semiconductor substrate, the connection via metal having a projection part projecting from the second surface; an insulating layer formed on the first surface of the semiconductor substrate to expose the projection part while surrounding a portion of a lateral side of the projection part; and a metal pad formed on the insulating layer such that the metal pad covers the projection part, thereby shortening an optical path to reduce light loss and improve image sensitivity.
1. An image sensor comprising:
a semiconductor substrate formed on a first surface thereof with a readout circuitry and a photodiode area;
a metal interconnection layer formed on the first surface;
a connection via metal extending from the first surface to a second surface of the semiconductor substrate, the connection via metal having a projection part projecting from the second surface;
an insulating layer formed on the second surface of the semiconductor substrate to expose the projection part while surrounding a portion of a lateral side of the projection part; and
a metal pad formed on the insulating layer such that the metal pad covers the projection part,
wherein the insulating layer has a thickness thinner than a projection height of the projection part.
2. The image sensor of claim 1 , wherein the insulating layer comprises a TEOS layer.
3. The image sensor of claim 1 , wherein the insulating layer is formed on a portion of the projection part extending from the second surface.
4. The image sensor of claim 1 , further comprising:
a protective layer formed over the insulating layer; and
a micro-lens formed on the protective layer in a region corresponding to the photodiode area.
5. An image sensor comprising:
a semiconductor substrate formed on a first surface thereof with a readout circuitry and a photodiode area;
a metal interconnection layer formed on the first surface;
a connection via metal extending from the first surface to a second surface of the semiconductor substrate, the connection via metal having a projection part projecting from the second surface;
a protective layer formed on the second surface, wherein the protective layer has a trench exposing the projection part; and
a metal pad formed in the trench so that the metal pad is electrically connected to the projection part, while being insulated from the semiconductor substrate,
wherein the protective layer comprises an oxide layer formed on the second surface and a nitride layer formed on the oxide layer,
wherein the oxide layer has a thickness thicker than a projection height of the projection part.
6. The image sensor of claim 5 , further comprising a micro-lens formed on the protective layer in a region corresponding to the photodiode area.
7. The image sensor of claim 5 , wherein a portion of the protective layer is interposed between the metal pad and the semiconductor substrate.