MEMS package and packaging method thereof

1. A MEMS (Micro Electro-Mechanical System) package comprising:

a MEMS device comprising MEMS structures formed on a substrate, first pad electrodes driving the MEMS structures, first sealing parts formed at an edge of the substrate, and connectors formed on the first pad electrodes and the first sealing parts; and

a MEMS driving electronic device comprising second pad electrodes and second sealing parts respectively corresponding to the first pad electrodes and the first sealing parts to be sealed with and bonded to the MEMS device through the connectors to form an air gap having a predetermined width.

2. The MEMS package of claim 1 , wherein the substrate of the MEMS device is a silicon substrate, and the MEMS device comprises a recessed part formed in the silicon substrate and the MEMS structures formed above the recessed part.

3. The MEMS package of claim 2 , wherein the MEMS structures are silicon nitride patterns or polysilicon patterns.

4. The MEMS package of claim 1 , wherein the substrate of the MEMS device is an SOI substrate, and the MEMS device comprises a space part and the MEMS structures, wherein an oxide layer of the SOI substrate is selectively etched to form the space part, and a silicon epitaxial layer of the SOI substrate is selectively etched to form silicon epitaxial patterns above the space part so as to form the MEMS structures of the silicon epitaxial patterns.

5. The MEMS package of claim 1 , wherein the substrate of the MEMS device is a silicon substrate, and the MEMS device comprises a space part, MEMS structures, and a cap layer, wherein the space part is formed in the silicon substrate, the silicon substrate is etched to form silicon patterns above the space part so as to form the MEMS structures of the silicon patterns, and the cap layer is formed on one of front and back surfaces of the silicon substrate to seal the recessed part.

6. The MEMS package of claim 5 , wherein the first pad electrodes of the MEMS device are connected to first vias formed in the substrate, second vias are connected to the first vias, and third pad electrodes and metal balls are formed on the second vias to be connected to an external substrate.

7. The MEMS package of claim 1 , wherein the first pad electrodes of the MEMS device are connected to vias formed in the substrate, and third pad electrodes and metal balls are formed on the vias to be connected to an external substrate.

8. A method of packaging an MEMS device and an MEMS driving electronic device, comprising:

forming MEMS structures above a substrate, forming first pad electrodes driving the MEMS structures, and forming first sealing parts at an edge of the substrate;

forming connectors on the first pad electrodes and the first sealing parts to form the MEMS device; and

sealing the MEMS driving electronic device with and bonding the MEMS driving electronic device to the MEMS device through the connectors to form an air gap having a predetermined width, wherein the MEMS driving electronic device comprises second pad electrodes and second sealing parts respectively corresponding to the first pad electrodes and the first sealing parts.

9. The method of claim 8 , wherein if the substrate of the MEMS device is a silicon substrate, the forming of the MEMS device comprises:

selectively etching the silicon substrate to form a recessed part;

forming a sacrificial layer in the recessed part;

forming the MEMS structures above the sacrificial layer and the silicon substrate;

forming the first pad electrodes and the first sealing parts on the MEMS structures; and

removing the sacrificial layer to form a space part below the MEMS structures.

10. The method of claim 9 , wherein the forming of the MEMS structures comprises:

forming a MEMS structure layer on the sacrificial layer and the silicon substrate; and

patterning the MEMS structure layer.

11. The method of claim 10 , wherein the sacrificial layer and the MEMS structures are formed of polysilicon and silicon nitride, respectively, or formed of oxide and polysilicon, respectively.

12. The method of claim 8 , wherein if the substrate of the MEMS device is an SOI substrate, the forming of the MEMS device comprises:

patterning a silicon epitaxial layer of the SOI substrate to form the MEMS structures of silicon epitaxial patterns; and

selectively etching an oxide layer of the SOI substrate under the MEMS structures to form a space part below the silicon epitaxial patterns.

13. The method of claim 8 , wherein if the substrate of the MEMS device is a silicon substrate, the forming of the MEMS device comprises:

selectively etching the silicon substrate to form a recessed part;

etching the silicon substrate to form MEMS structures of silicon patterns above the recessed part; and

forming a cap layer on one of front and back surfaces of the silicon substrate to form a space part above or below the MEMS structures.

14. The method of claim 13 , further comprising:

forming first vias in the substrate under the first pad electrodes of the MEMS device;

forming second vias in the cap layer, wherein the second vias are connected to the first vias; and

forming third pad electrodes and metal balls on the second vias, wherein the third pad electrodes and the metal balls are connected to an external substrate.

15. The method of claim 8 , further comprising:

forming vias in the substrate under the first pad electrodes of the MEMS device; and

forming third pad electrodes and metal balls on the vias, wherein the third pad electrodes and the metal balls are connected to an external substrate.