Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts
A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode.
1. A semiconducting device, comprising:
a. a substrate;
b. a piezoelectric wire, having a first end and an opposite second end, disposed on the substrate;
c. a structure that causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state; and
d. a first electrode coupled to the first end and a second electrode coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode, the device configured as a force-sensitive generator, wherein the electrical characteristic comprises generating charge carriers that flow into the first electrode,
wherein the piezoelectric wire comprises one of a plurality of zinc oxide nanowires extending upwardly from the substrate and wherein the first electrode comprises a conductive material having a corrugated surface, wherein the corrugated surface is disposed so as to face the substrate with the plurality of zinc oxide nanowires disposed therebetween.
2. The semiconducting device of claim 1 , wherein the electrical characteristic comprises allowing current to flow through the wire as a function of an amount that the wire is bent by the structure.
3. The semiconducting device of claim 2 , configured as a transistor, wherein the structure is configured to apply force to the piezoelectric wire between the first end and the second end.
4. The semiconducting device of claim 1 , wherein the electrical characteristic comprises restricting flow of charge carriers through the piezoelectric wire/metal electrode junction in a first direction and not restriction flow of charge carriers through the piezoelectric wire/metal electrode junction in a second direction opposite the first direction.
5. The semiconducting device of claim 4 , configured as a diode, wherein the structure is configured to apply force to the first electrode and the piezoelectric wire so that the first electrode is held against an expanded side of the piezoelectric wire, thereby forming a junction biased so as to restrict charge from flowing from the piezoelectric wire into the first electrode and so as not to restrict charge from flowing from the first electrode into piezoelectric wire.
6. The semiconducting device of claim 1 , further comprising a spacer disposed between the substrate and the first electrode that holds the first electrode spaced apart from the substrate.
7. The semiconducting device of claim 6 , wherein the spacer comprises a soft packaging material.