IP Library Granted Patent US 8,039,865
Granted Patent B2
US 8,039,865 · App. 12/720,228 · Granted Oct 18, 2011

Light emitting apparatus, and method for manufacturing the same, and lighting system

Assignee: LG Innotek Co., Ltd.
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Quick Facts
Patent No.
US 8,039,865
App. No.
12/720,228
Granted
Oct 18, 2011
Kind
B2
Abstract

A light emitting apparatus includes: a substrate including a first conductive type impurity; a first heatsink and a second heatsink on a first region and a second region of the substrate; second conductive type impurity regions on the substrate and electrically connected to the first heatsink and the second heatsink, respectively; a first electrode electrically connected to the first heatsink on the substrate; a second electrode electrically connected to the second heatsink on the substrate; and a light emitting device electrically connected to the first electrode and the second electrode on the substrate.

Claims (14)

1. A light emitting apparatus comprising:

a substrate including a first conductive type impurity;

a first heatsink and a second heatsink disposed on upper and lower portions of the substrate, respectively;

second conductive type impurity regions disposed at a region where the first and second heatsinks meet with the substrate, and electrically connected to the first and second heatsinks;

a first electrode electrically connected to the first heatsink on the substrate;

a second electrode electrically connected to the second heatsink on the substrate; and

a light emitting device electrically connected to the first and second electrodes on the substrate,

wherein the second heatsink is disposed below the first heatsink with the substrate there between, and the light emitting device is provided on an upper portion of the first heatsink.

2. The light emitting apparatus of claim 1 , wherein the substrate includes a silicon substrate.

3. The light emitting apparatus of claim 2 , wherein the substrate is provided on a surface thereof with an insulating layer, and the insulating layer includes a silicon oxide layer.

4. The light emitting apparatus of claim 1 , wherein the first and second heatsinks have at least a portion buried in the substrate.

5. The light emitting apparatus of claim 1 , wherein the first and second heatsinks include copper (Cu).

6. The light emitting apparatus of claim 1 , wherein the first and second heatsinks vertically overlap with the light emitting device.

7. The light emitting apparatus of claim 1 , wherein the first and second heatsinks vertically overlap with each other at least a portion thereof.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2021
From: LG INNOTEK CO., LTD.
To: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
Reel/Frame 056366/0335 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2010
From: CHO, BUM CHUL
To: LG INNOTEK CO., LTD.
Reel/Frame 024061/0479 →
Priority Claims (1)
KR 10-2009-0020131 · Mar 10, 2009 · national
Continuity (1)
Related Publication 20100230704A1 · Sep 16, 2010