Light emitting device fabrication method thereof, and light emitting apparatus

1. A light emitting device comprising:

a conductive substrate;

a reflection layer on the conductive substrate;

an adhesion layer on the reflection layer;

an adhesion reinforcement layer disposed partially on the adhesion layer;

an ohmic contact layer on the adhesion layer disposed between the adhesion reinforcement layers; and

a light emitting semiconductor layer on the ohmic contact layer and the adhesion reinforcement layer,

wherein a portion of the adhesion reinforcement layer adjacent to the reflection layer is wider than a portion of the adhesion reinforcement layer adjacent to the light emitting semiconductor layer.

2. The light emitting device of claim 1 , wherein a portion of a bottom surface and a lateral surface of the adhesion reinforcement layer is surrounded by the adhesion layer.

3. The light emitting device of claim 1 , wherein a top surface of the adhesion reinforcement layer is coplanar with a top surface of the ohmic contact layer.

4. The light emitting device of claim 1 , further comprising an etching protective layer disposed on periphery of a top surface of the adhesion layer.

5. The light emitting device of claim 1 , wherein the adhesion reinforcement layer includes a GaN material or a material including Zn.

6. The light emitting device of claim 1 , further comprising a seed layer between the conductive substrate and the reflection layer.

7. The light emitting device of claim 1 , wherein the adhesion reinforcement layer is thicker than the ohmic contact layer.