Process, voltage, and temperature sensor

1. An integrated circuit, comprising:

a process sensor configured to sense a process parameter indicative of a semiconductor process by which the integrated circuit is formed and, based upon the sensed process parameter, to provide a characterization of the semiconductor process to an output of the process sensor;

a temperature sensor configured to provide an indication of a temperature of the integrated circuit to an output of the temperature sensor; and

a voltage sensor configured to provide an indication of a power supply voltage level of the integrated circuit to an output of the voltage sensor;

wherein the output of the process sensor is electrically coupled to at least one of the temperature sensor and the voltage sensor to compensate at least one of the indication of the temperature and the indication of the power supply voltage level in response to the characterization of the semiconductor process.

2. The integrated circuit of claim 1 , wherein the output of the process sensor is electrically coupled to both the temperature sensor and the voltage sensor to compensate both the indication of the temperature and the indication of the power supply voltage level in response to the characterization of the semiconductor process.

3. The integrated circuit of claim 2 , wherein the process sensor provides the characterization of the semiconductor process each time the process sensor is powered on.

4. The integrated circuit of claim 1 , wherein the temperature sensor is configured to dynamically provide the indication of the temperature of the integrated circuit to the output of the temperature sensor, and wherein the voltage sensor is configured to dynamically provide the indication of the power supply voltage level of the integrated circuit to the output of the voltage sensor.

5. The integrated circuit of claim 4 , wherein the integrated circuit includes an associated semiconductor device that is commonly formed with the process sensor, the temperature sensor, and the voltage sensor using the same semiconductor process fabrication steps.

6. The integrated circuit of claim 5 , wherein the associated semiconductor device is programmable.

7. The integrated circuit of claim 6 , wherein the associated semiconductor device is compensated in response to the characterization of the semiconductor process provided by the process sensor, the indication of the temperature provided by the temperature sensor, and the indication of the power supply voltage level provided by the voltage sensor.

8. The integrated circuit of claim 7 , further comprising an algorithmic state machine, the algorithmic state machine being electrically coupled to the output of the process sensor, the output of the temperature sensor, the output of the voltage sensor, and a programmable input of the associated semiconductor device, the algorithmic state machine being configured to compensate the associated semiconductor device in response to the characterization of the semiconductor process provided by the process sensor, the indication of the temperature provided by the temperature sensor, and the indication of the power supply voltage level provided by the voltage sensor.

9. The integrated circuit of claim 8 , wherein the associated semiconductor device includes a programmable gain amplifier, wherein the algorithmic state machine includes an input to receive an operational setting indicative of at least one of a gain and a frequency response of the programmable gain amplifier, and wherein the algorithmic state machine is configured to compensate the programmable gain amplifier in response to the characterization of the semiconductor process provided by the process sensor, the indication of the temperature provided by the temperature sensor, and the indication of the power supply voltage level provided by the voltage sensor according to the operational setting.

10. The integrated circuit of claim 7 , further comprising at least one interface electrically coupled to the output of the process sensor, the output of the temperature sensor, the output of the voltage sensor, and a programmable input of the associated semiconductor device, the interface being configured to provide the characterization of the semiconductor process provided by the process sensor, the indication of the temperature provided by the temperature sensor, and the indication of the power supply voltage level provided by the voltage sensor to an external device, and to receive from the external device a compensated operational setting to provide to the programmable input of the associated semiconductor device.

11. The integrated circuit of claim 5 , wherein the associated semiconductor device has an output to provide an output signal, the integrated circuit further comprising:

at least one interface electrically coupled to the output of the process sensor, the output of the temperature sensor, and the output of the voltage sensor, the at least one interface being configured to provide the characterization of the semiconductor process provided by the process sensor, the indication of the temperature provided by the temperature sensor, and the indication of the power supply voltage level provided by the voltage sensor to an external device to allow the external device to compensate the output signal of the associated semiconductor device based upon the characterization of the semiconductor process, the indication of the temperature, and the indication of the power supply voltage level.