Mask and method to pattern chromeless phase lithography contact hole
View Patent ↗A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region.
1. A method of making a mask comprising:
providing a mask substrate;
forming a continuous unit cell on the mask substrate, the unit cell defining a first phase shift region on the mask substrate, wherein the unit cell comprises a center section and distinct extension sections, the extension sections are contiguous to and extend outwards from the center section, the distinct extension sections having a same width as the center section, wherein dimensions of the extension sections (extension dimensions) determine dimensions of a contact hole (contact hole dimensions) formed on a resist layer using the mask; and
the mask substrate abutting the unit cell defines a second phase shift region, wherein the first and second phase shift regions are out of phase.
2. The method of claim 1 wherein:
the first phase shift region has a 180 degree shift and the second phase shift region has a zero degree shift; or
the first phase shift region has a zero degree shift and the second phase shift region has a 180 degree shift.
3. The method of claim 1 wherein the unit cell has an orthogonal cross shape with the extension sections extending outwards from the center section.
4. The method of claim 1 wherein the unit cell has a T shape with three extension sections extending outwards from the center section.
5. The method of claim 1 wherein the unit cell has an orthogonal cross shape with the center section having a square shape and four distinct square shape rectangular sections extending outwards from the square center section, the center section and the rectangular sections have the same length sides.
6. The method of claim 1 wherein the extension sections have a minimum length between 70 and 200% of the width of the center section.
7. The method of claim 1 wherein the first phase shift region comprises a plurality of unit cells arranged in a row or column formation whereby contact holes are formed in a row or column formation under the center section.
8. The method of claim 1 wherein the unit cell comprises four distinct extension sections extending from sides of the center section.
9. The method of claim 1 wherein one of the first or second region is disposed in a trench portion of the mask substrate while the other of the first or second region is disposed on a surface portion of the mask substrate above the trench portion.
10. The method of claim 1 wherein the first region is disposed in a trench portion of the mask substrate while the second region is disposed on a surface portion of the mask substrate above the trench portion.
11. A method of making a mask comprising:
providing a mask substrate; and
disposing a continuous unit cell on the mask substrate, the continuous cell defining a first phase shift region of the mask substrate, wherein the unit cell comprises a center section and distinct extension sections which are contiguous to and extend from the center section, the distinct extension sections having a same width as the center section, wherein dimensions of the extension sections (extension dimensions) determine dimensions of a contact hole (contact hole dimensions) formed on a resist layer using the mask.
12. The method of claim 11 wherein the central and distinct extension sections comprise rectangular shaped portions.
13. The method of claim 12 wherein the unit cell comprises at least three distinct extension sections extending from at least three sides of the center section.
14. The method of claim 12 wherein the unit cell comprises four distinct extension sections extending from sides of the center section.
15. The method of claim 11 wherein the unit cell comprises at least three distinct extension sections extending from at least three sides of the center section.
16. The method of claim 11 wherein the unit cell comprises four distinct extension sections extending from sides of the center section.
17. The method of claim 11 wherein the unit cell comprises three distinct extension sections extending from at least three sides of the center section to form a T-shaped unit cell.
18. The method of claim 11 wherein the unit cell comprises four distinct extension sections extending from the center section to form a cross-shaped unit cell.
19. The method of claim 11 wherein the unit cell has an orthogonal cross shape with the center section having a square shape and four distinct square shape rectangular sections extending outwards from the square center section, the center section and the rectangular sections have the same length sides.
20. The method of claim 11 wherein the extension sections have a minimum length between 70 and 200% of the width of the center section.
21. The method of claim 11 wherein the first phase shift region comprises a plurality of unit cells arranged in a row or column formation whereby contact holes are formed in a row or column formation under the center section.
22. The method of claim 11 wherein the first region is disposed in a trench portion of the mask substrate.
23. A mask comprising:
a mask substrate;
a continuous unit cell disposed in a first phase shift region, wherein the unit cell comprises a center section and distinct extension sections which are contiguous to and extend from the center section, the distinct extension sections having a same width as the center section, wherein dimensions of the extension sections (extension dimensions) determine dimensions of a contact hole (contact hole dimensions) formed on a resist layer using the mask; and
a second phase shift region abutting the unit cell in the first phase shift region, the first and second phase shift regions are out of phase.
24. The mask of claim 23 wherein one of the first or second region is disposed in a trench portion of the mask substrate while the other of the first or second region is disposed on a surface portion of the mask substrate above the trench portion.
25. The mask of claim 23 wherein the first region is disposed in a trench portion of the mask substrate while the second region is disposed on a surface portion of the mask substrate above the trench portion.