Programmable resistive memory cell with oxide layer
View Patent ↗Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
1. A programmable metallization memory cell comprising:
an electrochemically active electrode and an inert electrode;
an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode;
an electrically insulating oxide layer separating the ion conductor solid electrolyte material from the electrochemically active electrode; and
a layer of germanium oxide separating the electrically insulating oxide layer and the ion conductor solid electrolyte material.
2. The programmable metallization memory cell of claim 1 wherein the electrically insulating oxide layer has a thickness in a range from 1 to 5 nanometers.
3. The programmable metallization memory cell of claim 1 wherein the electrically insulating oxide layer comprises a metal oxide.
4. The programmable metallization memory memory cell of claim 1 wherein the electrically insulating oxide layer comprises Si.
5. The programmable metallization memory memory cell of claim 1 wherein the ion conductor solid electrolyte material comprises a chalcogenide material.
6. The programmable metallization memory cell of claim 5 , wherein the electrically insulating oxide layer comprises Si, Al, or Hf.
7. A programmable metallization memory cell comprising:
an electrochemically active electrode and an inert electrode;
an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode, the ion conductor solid electrolyte material having an oxidized surface, comprising germanium oxide;
an oxide forming layer separating the oxidized surface of the ion conductor solid electrolyte material from the electrochemically active electrode.
8. The programmable metallization memory cell of claim 7 wherein the oxide forming layer has a thickness in a range from 1 to 5 nanometers.
9. The programmable metallization memory cell of claim 7 wherein the ion conductor solid electrolyte material comprises a chalcogenide material.
10. The programmable metallization memory cell of claim 7 wherein the oxide forming layer comprises Si, Al, or Hf.
11. A programmable metallization memory cell comprising:
an electrochemically active electrode and an inert electrode;
an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode, the ion conductor solid electrolyte material provides for formation of conducting filaments within the ion conductor solid electrolyte material that extend between the electrochemically active electrode and an inert electrode upon application of an electric field; and
an electrically insulating oxide layer separating the ion conductor solid electrolyte material from the electrochemically active electrode.
12. The programmable metallization memory cell of claim 11 wherein the electrically insulating oxide layer has a thickness in a range from 1 to 5 nanometers.
13. The programmable metallization memory cell of claim 11 wherein the electrically insulating oxide layer comprises a metal oxide.
14. The programmable metallization memory memory cell of claim 11 wherein the electrically insulating oxide layer comprises Si.
15. The programmable metallization memory memory cell of claim 11 wherein the ion conductor solid electrolyte material comprises a chalcogenide material.
16. The programmable metallization memory cell of claim 11 further comprising a layer of germanium oxide separating the electrically insulating oxide layer and the ion conductor solid electrolyte material.
17. The programmable metallization memory cell of claim 16 wherein the electrically insulating oxide layer comprises Si, Al, or Hf.