Nitride semiconductor light emitting device and method of manufacturing the same

1. A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, and a nitride semiconductor layer including a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order,

wherein said reflecting layer made of a dielectric material has a through-port passing through said reflecting layer in the thickness direction in a region located immediately under said transparent conductive layer.

2. The nitride semiconductor light-emitting device according to claim 1 , including a support substrate, said reflecting layer made of a dielectric material, said transparent conductive layer, said p-type nitride semiconductor layer, said light emitting layer and said n-type nitride semiconductor layer in this order.

3. The nitride semiconductor light-emitting device according to claim 2 , further including a eutectic bonding layer having a single- or multilayer structure made of a metal including a eutectic bonding metal or an alloy containing said metal between said support substrate and said reflecting layer made of a dielectric material.

4. The nitride semiconductor light-emitting device according to claim 3 , further including an adhesion layer between said reflecting layer made of a dielectric material and said eutectic bonding layer.

5. The nitride semiconductor light-emitting device according to claim 2 , wherein

said support substrate is a substrate made of a plated metal or alloy.

6. The nitride semiconductor light-emitting device according to claim 1 , wherein

said transparent conductive layer is made of a conductive metal oxide.

7. The nitride semiconductor light-emitting device according to claim 1 , wherein

said transparent conductive layer is made of an n-type nitride semiconductor.

8. The nitride semiconductor light-emitting device according to claim 1 , wherein

said reflecting layer made of a dielectric material has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.

9. The nitride semiconductor light-emitting device according to claim 1 , wherein

said reflecting layer made of a dielectric material has reflectance of 80 to 100% with respect to light emitted from said light emitting layer.

10. The nitride semiconductor light-emitting device according to claim 1 , wherein

a first surface of the nitride semiconductor layer provided with said reflecting layer made of a dielectric material is planar.

11. The nitride semiconductor light-emitting device according to claim 1 , wherein

a second surface of the nitride semiconductor layer opposite to a first surface of the nitride semiconductor layer.

12. The nitride semiconductor light-emitting device according to claim 1 , wherein

the length of said transparent conductive layer in a direction perpendicular to the thickness direction is smaller than the length of said p-type nitride semiconductor layer in a direction perpendicular to the thickness direction, and

said reflecting layer made of a dielectric material is in contact with both side surfaces of said transparent conductive layer and a surface of said transparent conductive layer closer to said reflecting layer made of a dielectric material and further in contact with a part of a surface of said p-type nitride semiconductor layer closer to said transparent conductive layer, said part of a surface being not in contact with said transparent conductive layer.

13. The nitride semiconductor light-emitting device according to claim 1 , wherein

the thickness of said reflecting layer made of a dielectric material is 0.2 to 5 μm.

14. A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, and a nitride semiconductor layer including a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order,

wherein said p-type nitride semiconductor layer includes a current blocking region formed in contact with said transparent conductive layer.

15. The nitride semiconductor light-emitting device according to claim 14 , wherein

said reflecting layer made of a dielectric material has a through-port passing through said reflecting layer in the thickness direction in a region located immediately under said transparent conductive layer, and

said through-port provided in said reflecting layer made of a dielectric material is positioned immediately under said current blocking region.

16. A method of manufacturing a nitride semiconductor light-emitting device including a support substrate, a reflecting layer made of a dielectric material, a transparent conductive layer, a nitride semiconductor layer including a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order, including the steps of:

(A) stacking said n-type nitride semiconductor layer, said light emitting layer and said p-type nitride semiconductor layer on a growth substrate in this order;

(B) forming said transparent conductive layer on the surface of said p-type nitride semiconductor layer;

(C) forming said reflecting layer made of a dielectric material on an exposed surface of an obtained laminate;

(D) stacking said support substrate;

(E) removing said growth substrate; and

(F) obtaining a plurality of nitride semiconductor light-emitting devices by performing chip division;

wherein the forming said reflecting layer made of a dielectric material includes forming a through-port passing through said reflecting layer in the thickness direction in a region located immediately under said transparent conductive layer.

17. The method of manufacturing a nitride semiconductor light-emitting device according to claim 16 , further comprising a step (G) of partially exposing said transparent conductive layer by forming a through-port passing through said reflecting layer in the thickness direction in said reflecting layer made of a dielectric material after the step (C).

18. The method of manufacturing a nitride semiconductor light-emitting device according to claim 17 , wherein

said through-port is formed by etching and said transparent conductive layer functions as an etching stopper layer in the step (G).

19. The method of manufacturing a nitride semiconductor light-emitting device according to claim 16 , further comprising a step (H) of exposing said reflecting layer made of a dielectric material by forming recesses substantially at a constant interval from the side of said n-type nitride semiconductor layer between the steps (E) and (F).

20. The method of manufacturing a nitride semiconductor light-emitting device according to claim 19 , wherein

said chip division is performed on any positions on the bottom surfaces of said recesses in the step (F).

21. The method of manufacturing a nitride semiconductor light-emitting device according to claim 16 , further comprising a step (I) of irregularizing the surface of said n-type nitride semiconductor layer after the step (E).

22. A method of manufacturing a nitride semiconductor light-emitting device including a growth substrate, a nitride semiconductor layer including an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer, a transparent conductive layer and a reflecting layer made of a dielectric material in this order, including the steps of:

(a) stacking said n-type nitride semiconductor layer, said light emitting layer and said p-type nitride semiconductor layer on said growth substrate in this order;

(b) forming said transparent conductive layer on the surface of said p-type nitride semiconductor layer;

(c) etching said transparent conductive layer, said p-type nitride semiconductor layer, said light emitting layer and a part of said n-type nitride semiconductor layer to partially expose said n-type nitride semiconductor layer;

(d) forming said reflecting layer made of a dielectric material on a surface of said transparent conductive layer and said p-type nitride semiconductor layer, and on an exposed surface of said n-type nitride semiconductor layer, the step of forming said reflecting layer including:

forming an SiO 2 layer having such a thickness that a critical angle of total reflection is reduced;

forming a periodic structure of SiO 2 layers and SiN layers, the periodic structure maximizing the reflectance of light in the oblique direction of 25°; and

forming a periodic structure of SiO 2 layers and SiN layers, the periodic structure maximizing the reflectance of light in the vertical direction;

removing a part of said reflecting layer in positions for forming pad electrodes; and

(f) forming said pad electrodes,

wherein the forming said reflecting layer made of a dielectric material includes forming a through-port passing through said reflecting layer in the thickness direction in a region located immediately under said transparent conductive layer.