Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
View Patent ↗High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO 2 . In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is Ti x O y wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.
1. A titanium-based layer, comprising:
titanium, the amount of titanium in the layer being represented by Ti x , where x is between about 1 and about 4; and
oxygen, the amount of oxygen in the layer being represented by O y , where y is between about 1 and about 7, wherein:
the titanium-based layer is densified, has a uniform thickness, is substantially free from columnar structures, and has a figure of merit, defined as the product of a dielectric constant of the titanium-based layer and a breakdown voltage of the titanium based layer, greater than 200 through a deposition process using a pulsed-DC power supply, an RF-bias to the substrate, and reactive ion sputtering on a substrate, wherein the pulsed-DC power supply is applied to a conductive ceramic target through a narrow-band rejection filter centered to remove power from the RF-bias such that the target voltage oscillates between positive and negative voltages.
2. The layer of claim 1 , wherein the layer is TiO 2 .
3. The layer of claim 2 , wherein the layer is deposited between conducting layers to form a capacitor.
4. The layer of claim 2 , wherein the layer includes at least one rare earth ion.
5. The layer of claim 4 , wherein the layer is deposited between conducting layers to form a capacitor.
6. The layer of claim 4 , wherein the at least one rare-earth ion includes erbium.
7. The layer of claim 4 , wherein the layer is deposited between conducting layers to form a light-emitting device.
8. The layer of claim 4 , wherein the layer is an optically active layer deposited on a light-emitting device.
9. The layer of claim 4 , wherein the layer is an optically active layer applied to a light-emitting device.
10. The layer of claim 1 , wherein the layer is sub-oxide of Titanium.
11. The layer of claim 10 , wherein the layer is deposited between conducting layers to form a capacitor.
12. The layer of claim 10 , wherein the layer includes at least one rare earth ion.
13. The layer of claim 12 , wherein the layer is deposited between conducting layers to form a capacitor.
14. The layer of claim 12 , wherein the at least one rare-earth ion includes erbium.
15. The layer of claim 12 , wherein the layer is deposited between conducting layers to form a light-emitting device.
16. The layer of claim 12 , wherein the layer is an optically active layer deposited on a light-emitting device.
17. The layer of claim 12 , wherein the layer is an optically active layer applied to a light-emitting device.
18. The layer of claim 2 , wherein the layer is a protective layer.
19. The layer of claim 18 , wherein the protective layer is a catalytic layer.
20. The layer of claim 18 , wherein the protective layer includes at least one rare-earth ion.
21. The layer of claim 1 , further including depositing an TiO 2 layer on the layer wherein the layer and the TiO 2 layers are deposited between conducting layers to form a capacitor with decreased roll-off characteristics with decreasing thickness of the TiO 2 layer.
22. The layer of claim 1 , wherein the layer includes at least one rare earth ion.
23. The layer of claim 22 , wherein the at least one rare-earth ion includes erbium.
24. The layer of claim 22 , wherein the layer is deposited between conducting layers to form a light-emitting device.
25. The layer of claim 22 , wherein the layer is an optically active layer deposited on a light-emitting device.
26. The layer of claim 22 , wherein the layer is an optically active layer applied to a light-emitting device.
27. The layer of claim 1 , wherein the layer is a conducting oxide.
28. The layer of claim 27 , wherein the substrate is a conducting electrode and the layer is a protective layer.
29. The layer of claim 28 , wherein the protective layer is a catalytic layer.
30. The layer of claim 28 , wherein the protective layer includes at least one rare-earth ion.
31. The layer of claim 27 , wherein the substrate is a dielectric and the layer is a protective layer.
32. The layer of claim 31 , wherein the protective layer is a catalytic layer.
33. The layer of claim 1 , a temperature of the substrate is controlled during deposition.
34. The layer of claim 33 , wherein the temperature is controlled using active temperature control.
35. The layer of claim 1 , wherein the substrate includes a transistor structure.
36. The layer of claim 1 , wherein the layer is an amorphous layer.