Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes a semiconductor element; a plate member disposed opposite to an electronic-circuit forming portion of the semiconductor element; and an elastic body arranged in a compressed state between the semiconductor element and the plate member, wherein the elastic body includes at least one first protruding portion at one end in an extension direction of the elastic body, the first protruding portion being formed opposite to the electronic-circuit forming portion of the semiconductor element, and the semiconductor element and the plate member are fastened by an adhesive agent.
1. A semiconductor device, comprising:
a semiconductor element;
a plate member disposed opposite to an electronic-circuit forming portion of said semiconductor element; and
an elastic body arranged in a compressed state between said semiconductor element and said plate member, wherein
said elastic body includes at least one first protruding portion having an acute angle shape at one end in an extension direction of said elastic body, said first protruding portion being formed opposite to said electronic-circuit forming portion of said semiconductor element, and
said semiconductor element and said plate member are fastened by an adhesive agent.
2. The semiconductor device according to claim 1 ; comprising
a soluble member disposed between said semiconductor element and said plate member.
3. The semiconductor device according to claim 2 , wherein
said soluble member is a resin part disposed between said elastic body and said semiconductor element.
4. The semiconductor device according to claim 1 , wherein
an electrode terminal formed on said plate member, and an external connection terminal formed in said electronic-circuit forming portion of said semiconductor element are joined via a bump.
5. The semiconductor device according to claim 3 , wherein
a thickness of said resin part is smaller than a length of an extension of said elastic body when released from said compressed state.
6. The semiconductor device according to claim 2 , wherein
said soluble member is a resin part which seals at least said first protruding portion of said elastic body.
7. The semiconductor device according to claim 6 , wherein
said resin part is disposed between said semiconductor element and said plate member except for a portion in a central area beneath said semiconductor element.
8. The semiconductor device according to claim 7 , wherein
an external connection terminal formed in said electronic-circuit forming portion of said semiconductor element, and an electrode terminal formed on said plate member are joined by a remeltable conductive member or by pressure bonding.
9. The semiconductor device according to claim 6 , wherein
a concave part which reaches said elastic body is formed in a top surface of said resin part, and
said first protruding portion of said elastic body is positioned lower than the top surface of said resin part.
10. The semiconductor device according to claim 9 , wherein
said concave part extends in a width direction of said resin part in the top surface of said resin part to reach a side surface of said resin part.
11. The semiconductor device according to claim 1 , wherein
an electronic-circuit forming portion is formed in a surface of said plate member, said surface being opposed to said semiconductor element, and
said elastic body includes at least one second protruding portion formed at another end in said extension direction, said second protruding portion being formed opposite to said electronic-circuit forming portion of said plate member.
12. The semiconductor device according to claim 11 , wherein
said elastic body is provided in a plural number, and
the second protruding portion of at least one elastic body is opposed to the electronic-circuit forming portion of said plate member.
13. The semiconductor device according to claim 12 , wherein
a resin part is provided between said elastic body and said plate member.
14. The semiconductor device according to claim 3 , wherein
a dissolving rate of said resin part by a chemical solution made of a material selected from the group consisting of nitric acid, sulfuric acid, and mixed acid thereof is not less than a dissolving rate of said adhesive agent by said chemical solution.
15. The semiconductor device according to claim 6 , wherein
a dissolving rate of said resin part by a chemical solution made of a material selected from the group consisting of nitric acid, sulfuric acid, and mixed acid thereof is not less than a dissolving rate of said adhesive agent by said chemical solution.