Channel cell system

1. A channel cell system comprising:

a substrate;

a plurality of separate vacuum chambers integrated on the substrate, said vacuum chambers having an interior section and an exterior section, a first of the separate vacuum chambers including an atom source;

at least one atom trap disposed in the interior section of a second of the separate vacuum chambers; and

a fluidic connection between the first separate vacuum chambers and the second separate vacuum chambers.

2. The system of claim 1 wherein said atom trap is an atom chip having conductive traces on its surface, wherein said conductive traces create magnetic fields to trap and manipulate atoms.

3. The system of claim 2 wherein said atom trap is an atom chip having conductive traces on both sides of the chip, wherein said conductive traces create magnetic fields to trap and manipulate atoms on said both sides of the chip simultaneously.

4. The system of claim 2 wherein said atom chip comprising at least one aperture to connect said both sides of the chip.

5. The system of claim 1 wherein said atom trap is an atom chip having conductive traces on its surface, wherein said conductive traces create electric fields to trap and manipulate ions.

6. The system of claim 5 wherein said atom trap is an atom chip having conductive traces on both sides of the chip, wherein said conductive traces create electric fields to trap and manipulate ions on said both sides of the chip simultaneously.

7. The system of claim 5 wherein said atom chip comprising at least one aperture to connect said both sides of the chip.

8. The system of claim 1 wherein said atom trap is a time-orbiting potential (TOP) trap having at least four conductors, wherein said conductors create magnetic fields to trap and manipulate atoms.

9. The system of claim 8 wherein said TOP trap is disposed in middle portion of the interior section of the second of the vacuum chamber.

10. The system of claim 8 wherein said conductors are supported by a support bar and attached to a cover cell by anodic bonding.

11. The system of claim 10 wherein said cover cell comprises an opening to provide electrical contacts from the support bar in the interior section of the second vacuum chamber to the exterior section of the second of the vacuum chamber.

12. The system of claim 1 wherein said atom trap is disposed on interior walls of the second of the vacuum chamber.

13. The system of claim 1 wherein said second of the vacuum chamber is placed in a curve position with respect to the first of the vacuum chamber to provide optical isolation to the second of the vacuum chamber.

14. The system of claim 1 further comprising electrical feed-throughs located at walls of the exterior section of the vacuum chambers to supply electrical power to the interior section of the plurality of the vacuum chambers.

15. The system of claim 1 wherein the atom source forms a cloud of atoms via a cold-atom technique in the first of the vacuum chamber.

16. The system of claim 15 further comprising a mechanism to transport the atoms through a micro-channel from the first of the vacuum chamber to the second of the vacuum chambers.

17. The system of claim 16 wherein said atoms are trapped by the atom trap in said second of the vacuum chambers.

18. The system of claim 15 wherein said atoms are condensed to form a Bose-Einstein condensate in said second of the vacuum chambers.

19. The system of claim 15 wherein said atoms are manipulated to form an atom interferometer in said second of the vacuum chambers.

20. A method for handling cold atoms, the method comprising:

integrating at least a first chamber and at least a second chamber onto a substrate;

producing cold atoms in the first chamber;

transferring said cold atoms from the first chamber to the second chamber, said second chamber having a lower internal pressure than an internal pressure of the first chamber; and

providing an atom trap in an interior of the second chamber to trap and manipulate said atoms.