Carbon ribbon to be covered with a thin layer made of semiconductor material and method for depositing a layer of this type

1. A method of depositing a layer of semiconductor material on at least one of two faces of a carbon ribbon, said carbon ribbon having two edges, wherein the method comprises the steps of:

said carbon ribbon is pulled progressively upwards, substantially vertically, lengthwise through a horizontal equilibrium surface of a bath of molten semiconductor material;

said semiconductor material becomes deposited by wetting said face as the carbon ribbon is pulled, wherein a shape of the edges of said carbon ribbon is changed so as to increase a thickness of the layer of semiconductor material that is deposited on the two edges of the carbon ribbon.

2. The method according to claim 1 , wherein each of the two edges of the carbon ribbon is formed into a rim.

3. The method according to claim 2 , wherein said rim is selected from the group consisting of flared shape, of substantially rectangular shape, and of substantially triangular shape.

4. The method according to claim 1 , wherein, when a layer of semiconductor material is deposited simultaneously on both faces of the carbon ribbon, each of the two edges of the carbon ribbon is given the shape of a double rim.

5. The method according to claim 1 , wherein the shape of the two edges of said carbon ribbon is modified by forming the two edges of the carbon ribbon by upsetting them continuously towards each other.

6. The method according to claim 1 , wherein the shape of the two edges of said carbon ribbon is modified by flattening the edges.

7. The method according to claim 1 , wherein said semiconductor material is selected from the group consisting of silicon, germanium, and type III-V semiconductor compounds of the GaAs family presenting congruent or quasi congruent melting.

8. The method according to claim 1 , wherein the semiconductor material is silicon, and the carbon ribbon is covered in a layer of pyrolytic carbon on which the silicon layer is deposited.

9. A carbon ribbon having two edges, with at least one of its two faces being designed to be covered in a layer of semiconductor material by causing said carbon ribbon to pass substantially vertically upwards through a bath of molten semiconductor material, wherein each of its two edges on its two faces projects to form a rim, providing an increased thickness of the layer of semiconductor material deposited on the two edges of the two faces of said carbon ribbon.

10. The ribbon according to claim 9 , wherein each of said two edges flares so as to form a half-round shape.

11. The ribbon according to claim 9 , wherein each of said two edges forms a shoulder substantially perpendicular to said face of the carbon ribbon that is to receive the layer of semiconductor material, said rim then being substantially rectangular.

12. The ribbon according to claim 9 , wherein each of said two edges forms a shoulder that slopes relative to said face of the carbon ribbon that is to receive the layer of semiconductor material, said rim then being substantially triangular.

13. The method according to claim 1 , wherein each of its edges has an outside portion substantially perpendicular to said face of the carbon ribbon that is to receive the layer of semiconductor material.

14. The method according to claim 13 , wherein said outside portion includes a portion that is set back towards the carbon ribbon.

15. The ribbon according to claim 9 , wherein said semiconductor material is deposited on both faces of the ribbon, and each of the two edges of the carbon ribbon forms a double rim.

16. The method according to claim 9 , wherein said semiconductor material is selected from the group consisting of silicon, germanium, and type III-V semiconductor compounds of the GaAs family with congruent or quasi-congruent melting.