Semiconductor light-emitting device
View Patent ↗A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.
1. A semiconductor light-emitting device comprising:
a substrate;
an n-type semiconductor layer formed on the substrate;
an active layer laminated on the n-type semiconductor layer and capable of emitting a light;
a p-type semiconductor layer laminated on the active layer;
an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer; and
a p-electrode which is disposed on the p-type semiconductor layer and includes a dot-like nickel oxide layer in direct contact with the p-type semiconductor layer and a Ag layer formed on the dot-like nickel oxide layer,
wherein the dot-like nickel oxide layer is interposed between the p-type semiconductor layer and the Ag layer, and the light emitted from the active layer is extracted externally from the substrate side.
2. The device according to claim 1 , wherein the dot-like metallic layer has a film thickness ranging from 1 nm to 3 nm.
3. The device according to claim 1 , wherein the dot-like nickel oxide layer is formed to have an area ratio ranging from 50% to 85% based on an entire area of the p-electrode.
4. A semiconductor light-emitting device comprising:
a sapphire substrate;
an n-type clad layer formed of GaN and laminated on the sapphire substrate;
a multiple quantum well layer which is formed of InGaN, laminated on the n-type clad layer and capable of emitting a light;
a p-type clad layer formed of AlGaN and laminated on the multiple quantum well layer;
an n-electrode which is disposed on a lower surface of the sapphire substrate or on the n-type clad layer and spaced away from the multiple quantum well layer and p-type clad layer; and
a p-electrode which is disposed on the p-type clad layer and includes a dot-like nickel oxide layer in direct contact with the p-type clad layer and a Ag layer formed on the dot-like nickel oxide layer,
wherein the dot-like nickel oxide layer is interposed between the p-type clad layer and the Ag layer, and the light emitted from the multiple quantum well layer is extracted externally from the substrate side.
5. The device according to claim 4 , wherein the dot-like nickel oxide layer has a film thickness ranging from 1 nm to 3 nm.
6. The device according to claim 4 , wherein the dot-like nickel oxide layer is formed to have an area ratio ranging from 50% to 85% based on an entire area of the p-electrode.
7. A method of manufacturing a semiconductor light-emitting device according to claim 1 , wherein the p-electrode is formed by a process comprising:
forming the dot-like nickel layer on the p-type semiconductor layer;
forming the Ag layer on the dot-like nickel layer; and
subjecting the Ag layer to a heat treatment in an atmosphere containing oxygen at a temperature ranging from 350° C. to lower than 600° C.
8. The method according to claim 7 , wherein the dot-like nickel oxide layer has a film thickness ranging from 1 nm to 3 nm.
9. The method according to claim 7 , wherein the dot-like nickel oxide layer is formed to have an area ratio ranging from 50% to 85% based on an entire area of the p-electrode.