Germanium film optical device
A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes.
1. A germanium (Ge) film optical device, the device comprising:
a Ge substrate selected from a group consisting of non-doped and lightly doped with a first dopant selected from a group consisting of n and p type dopants, the Ge substrate having a first surface moderately doped with the first dopant and a second surface with a first region heavily doped with the first dopant, and a second. region heavily doped with a second dopant, having an opposite electron affinity than the first dopant and forming a pn junction; and,
an interlevel dielectric (ILD) layer overlying the Ge substrate second surface, with metal-filled contact holes overlying the first and second regions of the Ge substrate second surface and metal pads overlying the contact holes.
2. The device of claim 1 further comprising:
a glass substrate having a top surface bonded to the Ge substrate first surface.
3. The device of claim 2 further comprising:
a silicon dioxide layer interposed between the glass substrate top surface and the Ge substrate first surface.
4. The device of claim 2 wherein the glass substrate has a thermal expansion coefficient of about (5 to 8)×10 −6 K −1 at room temperature.
5. The device of claim 1 wherein the Ge substrate has a thickness in a range of about 1 to 100 microns.
6. The device of claim 1 wherein the Ge substrate first surface has a doping density in a range of 1×10 16 to 5×10 18 cm −3 .
7. The device of claim 1 wherein the first and second regions of the Ge substrate second surface each have doping densities in a range of 5×10 18 to 1×10 21 cm −3 .
8. The device of claim 1 further comprising:
a silicon substrate photodiode read-out circuit having electrical contacts bonded to the metal pads.
9. A germanium (Ge) image sensor array comprising:
a Ge substrate selected from a group consisting of non-doped and lightly doped with a first dopant selected from a group consisting of n and p type dopants, the Ge substrate having a first surface moderately doped with the first dopant and a second surface having m columns and n rows of pn photodiodes, where each photodiode includes a first region heavily doped with the first dopant, and a second region heavily doped with a second dopant, having an opposite electron affinity than the first dopant and forming a pn junction;
an interlevel dielectric (ILD) layer overlying the Ge substrate second surface, with metal-filled contact holes overlying the first and second regions of each pn photodiode and metal pads overlying the contact holes; and,
a silicon (Si) substrate read-out circuit having an array of pixel control elements arranged in m columns and n rows, where electrical contacts for each pixel control element are bonded to the metal pads of a corresponding pn photodiode.
10. The image sensor array of claim 9 further comprises:
a glass substrate having a top surface bonded to the Ge substrate first surface.