IP Library Granted Patent US 8,108,984
Granted Patent B2
US 8,108,984 · App. 12/406,512 · Granted Feb 7, 2012

Method for manufacturing integrated circuit inductors having slotted magnetic material

Assignee: Intel Corporation
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Quick Facts
Patent No.
US 8,108,984
App. No.
12/406,512
Granted
Feb 7, 2012
Kind
B2
Abstract

Methods of manufacture of integrated circuit inductors having slotted magnetic material will be described. The methods may employ electro- or electroless plating techniques to form a layer or layers of magnetic material within the slotted magnetic material structure, and in particular those magnetic material layers adjacent to insulator layers.

Claims (12)

1. A method comprising:

forming, with sputtering, a seed layer of magnetic material;

forming an insulator on the seed layer of magnetic material;

etching a plurality of slots in the insulator;

forming a magnetic material in the slots;

planarizing the magnetic material in the slot, a surface of the magnetic material in the slot and a surface of the insulator are coplanar; and

forming a plurality of metal lines on the magnetic material in the slot, the metal lines insulated from the magnetic material.

2. The method of claim 1 , forming the magnetic material in the slots further comprising:

depositing the magnetic material in the slot with one of electroplating, electroless plating, or sputtering.

3. The method of claim 1 , the planarizing the magnetic material in the slot comprising planarizing the magnetic material with chemical mechanical polishing.

4. The method of claim 1 , the magnetic material in the slot comprising an alloy selected from the group consisting of CoZrTa, CoZr, CoZrNb, CoZrMo, FeCoAlN, CoP, FeCoP, CoPW, CoBW, CoPBW, CoHf, CoNb, CoW, CoTi, FeCoN, FeTaN, FeCoBSi, FeNi, CoFeHfO, CoFeSiO, CoZrO, CoFeAlO, and a combination thereof.

5. The method of claim 4 , the insulator is selected from the group consisting of SiO 2 , SiN, SiOF, SiOC, polyimide, a photosensitive insulating material, and any other low dielectric constant interlayer dielectric.

Continuity (2)
Continuation 11479236 · Jun 30, 2006
Related Publication 20090207576A1 · Aug 20, 2009