Thin-film photovoltaic devices
A method is provided for producing a thin-film photovoltaic device. The method includes forming on a substrate a first thin-film absorber layer using a first deposition process. A second thin-film absorber layer is formed on the first thin-film absorber layer using a second deposition process different from the first deposition process. The first and second thin-film absorber layers are each photovoltaically active regions and the second thin-film absorber layer has a smaller concentration of defects than the first thin-film absorber layer.
1. A method of producing a thin-film photovoltaic device, comprising:
forming on a substrate a first thin-film absorber layer using a first deposition process; and
forming on the first thin-film absorber layer a second thin-film absorber layer using a second deposition process different from the first deposition process, wherein said second thin-film absorber layer has a smaller concentration of defects than the first thin-film absorber layer, and wherein the first and second thin-film absorber layers are each photovoltaically active regions, one of the first or second deposition processes being selected from the group consisting of a reacted particle deposition process, a reacted target deposition process and a co-evaporation deposition process.
2. The method of claim 1 , wherein at least one of the first and second deposition processes comprises deposition of CIGS.
3. The method of claim 1 , wherein said first deposition process is a reacted particle deposition process.
4. The method of claim 1 , wherein said second deposition process is a reacted target physical deposition process.
5. The method of claim 1 , wherein said second deposition is a co-evaporation deposition process.
6. The method of claim 1 , further comprising performing at least one surface treatment step following said first deposition process.
7. The method of claim 1 , further comprising chemically doping the second thin-film absorber layer step following said second deposition process.
8. The method of claim 1 , wherein said second thin-film absorber layer has a slower recombination rate than the first thin-film absorber layer.
9. The method of claim 1 , wherein said first and second thin-film absorber layers have essentially the same chemical composition and optical bandgap.
10. A method of producing a thin-film photovoltaic device, comprising:
forming on a substrate a first thin-film absorber layer using a first deposition process; and
forming on the first thin-film absorber layer a second thin-film absorber layer using a second deposition process different from the first deposition process, wherein said second thin-film absorber layer has a slower recombination rate than the first thin-film absorber layer, and wherein the first and second thin-film absorber layers are each photovoltaically active regions, wherein said second deposition process is a reacted target physical deposition process.
11. The method of claim 10 , wherein said first deposition process is a reacted particle deposition process.
12. A method of producing a thin-film photovoltaic device, comprising:
forming on a substrate a first thin-film absorber layer using a first deposition process; and
forming on the first thin-film absorber layer a second thin-film absorber layer using a second deposition process different from the first deposition process, wherein said first and second thin-film absorber layers have essentially the same chemical composition and optical bandgap, and wherein the first and second thin-film absorber layers are each photovoltaically active regions, wherein said second deposition process is a reacted target physical deposition process.
13. The method of claim 12 , wherein said first deposition process is a reacted particle deposition process.