Method of manufacturing nitride semiconductor light emitting device
An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.
1. A method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between said n-type nitride semiconductor and said p-type nitride semiconductor; wherein
said n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer; and
said n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers; said method comprising:
forming said n-type contact layer by organic metal vapor deposition with a growth temperature set within a range of 1000 to 1100° C., and
forming said n-side GaN layer by organic metal vapor deposition with a growth temperature set within a range of 500 to 900° C. and using nitrogen as a carrier gas, such that said n-side GaN layer is formed directly on said n-type contact layer, and between said n-type contact layer and said active layer.
2. The method of manufacturing a nitride semiconductor light emitting device according to claim 1 , wherein
said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
3. The method of manufacturing a nitride semiconductor light emitting device according to claim 1 , wherein
said n-side GaN layer and said active layer are formed to be in contact with each other, and said n-type contact layer contains an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
4. The method of manufacturing a nitride semiconductor light emitting device according to claim 3 , wherein
said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
5. The method of manufacturing a nitride semiconductor light emitting device according to claim 1 , wherein
each of said n-type contact layer and said n-side GaN layer is formed only of an undoped or n-type GaN layer.
6. The method of manufacturing a nitride semiconductor light emitting device according to claim 1 , wherein
said n-side GaN layer is formed of an n-type layer containing an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
7. The method of manufacturing a nitride semiconductor light emitting device according to claim 6 , wherein
said n-side GaN layer and said active layer are formed to be in contact with each other and said n-type contact layer contains an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
8. The method of manufacturing a nitride semiconductor light emitting device according to claim 7 , wherein
said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
9. The method of manufacturing a nitride semiconductor light emitting device according to claim 1 , wherein
growth rate of said n-side GaN layer is at most 2 μm/h.
10. The method of manufacturing a nitride semiconductor light emitting device according to claim 9 , wherein
said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
11. The method of manufacturing a nitride semiconductor light emitting device according to claim 9 , wherein
said n-side GaN layer and said active layer are formed to be in contact with each other, and said n-type contact layer contains an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
12. The method of manufacturing a nitride semiconductor light emitting device according to claim 11 , wherein
said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
13. The method of manufacturing a nitride semiconductor light emitting device according to claim 9 , wherein
said n-type nitride semiconductor is formed of an undoped or n-type GaN layer.
14. The method of manufacturing a nitride semiconductor light emitting device according to claim 13 , wherein
said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
15. The method of manufacturing a nitride semiconductor light emitting device according to claim 13 , wherein
said n-side GaN layer and said active layer are formed to be in contact with each other, and said n-type contact layer contains an n-type impurity at a concentration of at least 1×10 18 /cm 3 .
16. The method of manufacturing a nitride semiconductor light emitting device according to claim 15 , wherein
said n-side GaN layer is formed of said n-type layer containing an n-type impurity at a concentration of at least 1×10 18 /cm 3 .