IP Library Granted Patent US 8,129,273
Granted Patent B2
US 8,129,273 · App. 12/881,616 · Granted Mar 6, 2012

Semiconductor device and method for producing the same

Assignee: Canon Kabushiki Kaisha
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Quick Facts
Patent No.
US 8,129,273
App. No.
12/881,616
Granted
Mar 6, 2012
Kind
B2
Abstract

In a semiconductor device which has through holes in an end face, in which a semiconductor element is fixedly mounted on a face of a substrate which has a wiring pattern, which is conductive to the wiring portion formed in the through hole, in at least one face, in which electrodes of the semiconductor element are electrically connected to the wiring pattern, and in which the face of the substrate which has the semiconductor element is coated with a resin, the through hole has a through hole land with a width of 0.02 mm or more, which is conductive to the wiring portion, in a substrate face, and the wiring portion and the through hole land are exposed.

Claims (8)

1. A method of manufacturing a semiconductor device comprising steps of:

inserting, between upper and lower moldings disposed opposite to each other, a set of semiconductor devices each of which includes a plurality of semiconductor elements fixedly mounted along vertical columns and horizontal rows on a surface of a substrate having a wiring pattern electrically connected to a wiring portion formed in a through hole formed on the substrate, such that an electrode of each semiconductor element is electrically connected to the wiring pattern;

injecting a resin in a cavity between the upper and lower moldings holding the semiconductor elements, and curing the resin;

separating, from the upper and lower moldings, the set of semiconductor devices sealed within the resin;

cutting the substrate along the through hole, to be separated into each of the semiconductor devices, wherein the through hole has, on the surface of the substrate, a through hole land of a width of 0.02 mm or more electrically connected to the wiring portion, and at least one of the upper and lower moldings has a convex portion pressing the through hole at an area extending over a width of the through hole land, so that the resin does not flow into the through hole during the injecting of the resin.

2. A method according to claim 1 , wherein a plurality of cavities between the upper and lower moldings are arranged along a plurality of columns, and cavities along one of the plurality of columns correspond to semiconductor elements of the plurality of semiconductor elements.

3. A method according to claim 2 , wherein the cavities are arranged so that the cavities along the one of the plurality of columns contact with each other and have a gate at a contact portion, and the resin is injected through the gate into each of the cavities successively.

4. A method according to claim 1 , wherein a release film is inserted into a cavity plane of at least one of the upper and lower moldings so that the molding or moldings into which the release film is inserted presses the through hole through the release film.

Priority Claims (1)
JP 2007-115616 · Apr 25, 2007 · national
Continuity (2)
Division 12061097 · Apr 2, 2008
Related Publication 20100330725A1 · Dec 30, 2010