Wiring substrate with reinforcement
A wiring substrate assembly includes a resin wiring substrate and a reinforcement member. The resin wiring substrate does not have a core substrate, and includes a substrate main surface, a substrate back surface, a laminate structure comprised of resin insulation layers and conductive layers, and connection terminals disposed on the substrate main surface, to which a chip component is connectable. The reinforcement member is bonded to the substrate main surface and defines an opening portion extending through the reinforcement member so as to expose the main-surface-side connection terminals. The reinforcement member comprises a composite material including a resin material containing an inorganic material.
1. A wiring substrate assembly comprising:
a resin wiring substrate not having a core substrate, and including a substrate main surface, a substrate back surface, a laminate structure comprised of resin insulation layers and conductive layers, and a plurality of connection terminals disposed on the substrate main surface, to which a chip component is connectable; and
a reinforcement member bonded to the substrate main surface and defining an opening portion extending through the reinforcement member so as to expose the plurality of connection terminals, the reinforcement member comprising a composite material including a resin material containing an inorganic material,
an inner wall surface of the opening portion being roughened, and
the opening portion being adapted to receive an underfill material.
2. A wiring substrate assembly according to claim 1 , wherein the inorganic material comprises a sheet material of inorganic fiber.
3. A wiring substrate assembly according to claim 1 , wherein a thermal expansion coefficient of the reinforcement member differs from a thermal expansion coefficient of the resin wiring substrate by 0 ppm/° C. to 10.0 ppm/° C. inclusive.
4. A wiring substrate assembly according to claim 1 , wherein:
the reinforcement member has a contact surface in contact with the substrate main surface, and a noncontact surface located on a side opposite the contact surface, and
at least one of the contact surface and the noncontact surface is clad with a metal foil.
5. A wiring substrate assembly according to claim 1 , wherein a region of the substrate main surface which is exposed from the opening portion is roughened.
6. A wiring substrate assembly according to claim 1 , wherein the resin wiring substrate, the reinforcement member, and the underfill material are formed of respective resin materials of substantially the same composition.
7. A wiring substrate assembly according to claim 1 , further comprising:
further connection terminals for connection to a motherboard are disposed on the substrate back surface, and
vias provided in the resin insulation layers, each of the vias having a diameter which increases toward the substrate back surface.
8. A semiconductor device comprising:
a resin wiring substrate not having a core substrate, and including a substrate main surface, a substrate back surface, a laminate structure comprised of resin insulation layers and conductive layers, and a plurality of connection terminals disposed on the substrate main surface;
a reinforcement member bonded to the substrate main surface and defining an opening portion extending through the reinforcement so as to expose the plurality of connection terminals; and
a chip component connected to the connection terminals, the reinforcement member comprising a composite material including a resin material containing an inorganic material;
a region of the substrate main surface of the resin wiring substrate which is exposed from the opening portion being roughened; and
an underfill material being charged into the opening portion.
9. A semiconductor device according to claim 8 , wherein the inorganic material comprises a sheet material of inorganic fiber.
10. A semiconductor device according to claim 8 , wherein a thermal expansion coefficient of the reinforcement member differs from a thermal expansion coefficient of the resin wiring substrate by 0 ppm/° C. to 10.0 ppm/° C. inclusive.
11. A semiconductor device according to claim 8 , wherein:
the reinforcement member has a contact surface in contact with the substrate main surface, and a noncontact surface located on a side opposite the contact surface, and
at least one of the contact surface and the noncontact surface is clad with a metal foil.
12. A semiconductor device according to claim 8 , further comprising:
further connection terminals for connection to a motherboard are disposed on the substrate back surface, and
vias provided in the resin insulation layers, each of the vias having a diameter which increases toward the substrate back surface.
13. A semiconductor device comprising:
a resin wiring substrate including a substrate main surface, a substrate back surface, a laminate structure comprised of resin insulation layers and conductive layers, and a plurality of connection terminals disposed on the substrate main surface;
a reinforcement member bonded to the substrate main surface and defining an opening portion extending through the reinforcement member so as to expose the plurality of connection terminals therefrom, an inner wall surface of the opening portion being roughened;
a chip component connected to the connection terminals; and
an underfill material charged into the opening portion.
14. A semiconductor device according to claim 13 , wherein a region of the substrate main surface which is exposed from the opening portion is roughened.
15. A semiconductor device according to claim 13 , wherein the resin wiring substrate, the reinforcement member, and the underfill material are formed of respective resin materials of substantially the same composition.
16. A semiconductor device according to claim 13 , further comprising:
further connection terminals for connection to a motherboard are disposed on the substrate back surface, and
vias provided in the resin insulation layers, each of the vias having a diameter which increases toward the substrate back surface.
17. A semiconductor device according to claim 13 , wherein the reinforcement member is comprised of a composite material including a resin material containing an inorganic material.
18. A semiconductor device according to claim 17 , wherein the inorganic material comprises a sheet material of inorganic fiber.
19. A semiconductor device according to claim 13 , wherein a thermal expansion coefficient of the reinforcement member differs from a thermal expansion coefficient of the resin wiring substrate by 0 ppm/° C. to 10.0 ppm/° C. inclusive.
20. A semiconductor device according to claim 14 , wherein the underfill material is charged into a clearance between the chip component and the resin wiring substrate and into a clearance between the chip component and the reinforcement, and covers a surface of the chip component.